18545419. SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Chulkwon Park of Hwaseong-si (KR)
Sunghee Han of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18545419 titled 'SEMICONDUCTOR MEMORY DEVICES
Simplified Explanation
The semiconductor memory device described in the abstract includes a memory cell region with memory cells and active regions, as well as a dummy cell region with dummy active regions. The active regions in the memory cell region extend in a diagonal direction, while the dummy active regions in the dummy cell region have a greater width in the short axis direction.
- Memory cell region with memory cells and active regions
- Dummy cell region with dummy active regions
- Active regions in memory cell region extend diagonally
- Dummy active regions in dummy cell region have greater width in short axis direction
Potential Applications
This technology could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM, to improve performance and efficiency.
Problems Solved
1. Enhanced memory cell region design for improved functionality 2. Efficient use of space with dummy cell region surrounding memory cell region
Benefits
1. Increased memory device performance 2. Optimal use of active regions in memory cell region 3. Improved overall efficiency of semiconductor memory devices
Potential Commercial Applications
Optimized semiconductor memory devices for consumer electronics, data storage systems, and computing devices.
Possible Prior Art
One possible prior art could be the use of dummy cells in semiconductor memory devices to improve performance and efficiency. Additionally, the design of active regions in memory cell regions may have been explored in previous patents or publications.
What is the manufacturing process for implementing this design in semiconductor memory devices?
The manufacturing process for implementing this design would involve precise lithography and etching techniques to create the active regions and memory cells on the substrate. Additionally, specialized deposition processes may be used to form the dummy active regions in the dummy cell region.
How does the diagonal extension of active regions in the memory cell region impact the overall performance of the semiconductor memory device?
The diagonal extension of active regions in the memory cell region allows for more efficient use of space and improved connectivity between memory cells. This design can enhance data transfer speeds and reduce interference between adjacent memory cells, ultimately leading to better performance of the semiconductor memory device.
Original Abstract Submitted
A semiconductor memory device includes a substrate comprising a memory cell region and a dummy cell region surrounding the memory cell region, the memory cell region including a plurality of memory cells, a plurality of active regions in the memory cell region, each of the plurality of active regions extending in a long axis direction, the long axis direction being a diagonal direction with respect to a first horizontal direction and a second horizontal direction orthogonal to the first horizontal direction, each of the plurality of active regions having a first width in a short axis direction orthogonal to the long axis direction, and a plurality of dummy active regions in the dummy cell region, each extending in the long axis direction, each of the plurality of dummy active regions having a second width greater than the first width in the short axis direction.
