View source for 18545180. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)

=Integrated Assemblies and Methods of Forming Integrated Assemblies=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:David K. Hwang of Boise ID (US)|David K. Hwang of Boise ID (US)]][[Category:David K. Hwang of Boise ID (US)]]

[[:Category:Richard J. Hill of Boise ID (US)|Richard J. Hill of Boise ID (US)]][[Category:Richard J. Hill of Boise ID (US)]]

[[:Category:Gurtej S. Sandhu of Boise ID (US)|Gurtej S. Sandhu of Boise ID (US)]][[Category:Gurtej S. Sandhu of Boise ID (US)]]

==Integrated Assemblies and Methods of Forming Integrated Assemblies - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18545180 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies

==Simplified Explanation==

The integrated assembly described in the patent application includes container-shaped structures with source/drain regions and channel regions, as well as second conductive structures with gate regions adjacent to the channel regions. Storage elements are also present and are electrically coupled with the upper source/drain regions.

* First conductive structures extend along a first direction.
* Spaced-apart container-shaped structures are positioned over the first conductive structures.
* Each container shape has lower source/drain regions, upper source/drain regions, and a channel region.
* Second conductive structures extend along a second direction crossing the first direction.
* Storage elements are electrically coupled with the upper source/drain regions.

== Potential Applications ==
This technology could be applied in:
* Semiconductor manufacturing
* Integrated circuit design
* Memory storage devices

== Problems Solved ==
This technology helps to:
* Improve the efficiency of integrated circuits
* Enhance the performance of memory storage devices

== Benefits ==
The benefits of this technology include:
* Increased speed and reliability of electronic devices
* Higher storage capacity in memory devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Consumer electronics
* Automotive electronics
* Telecommunications industry

== Possible Prior Art ==
One possible prior art for this technology could be:
* Integrated circuit structures with similar container-shaped designs and conductive structures.

=== Unanswered Questions ===

=== How does this technology impact energy consumption in electronic devices? ===
This article does not provide information on the energy efficiency of devices utilizing this technology. Further research may be needed to understand the impact on energy consumption.

=== What are the potential scalability limitations of this technology? ===
The article does not address the scalability limitations of this technology. Future studies could investigate the scalability of this innovation for different applications and industries.


==Original Abstract Submitted==

Some embodiments include an integrated assembly having first conductive structures extending along a first direction. Spaced-apart upwardly-opening container-shapes are over the first conductive structures. Each of the container-shapes has a first sidewall region, a second sidewall region, and a bottom region extending from the first sidewall region to the second sidewall region. Each of the first and second sidewall regions includes a lower source/drain region, an upper source/drain region, and a channel region between the upper and lower source/drain regions. The lower source/drain regions are electrically coupled with the first conductive structures. Second conductive structures extend along a second direction which crosses the first direction. The second conductive structures have gate regions operatively adjacent the channel regions. Storage elements are electrically coupled with the upper source/drain regions. Some embodiments include methods of forming integrated assemblies.



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