18544996. SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Jaeho Hong of Hwaseong-si (KR)
Ilgweon Kim of Hwaseong-si (KR)
Hyeoungwon Seo of Yongin-si (KR)
Sungwon Yoo of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18544996 titled 'SEMICONDUCTOR MEMORY DEVICES
Simplified Explanation
The semiconductor memory device described in the abstract includes a semiconductor substrate, a common source semiconductor layer, insulating layers, word line structures, a memory cell dielectric layer, and a memory cell structure with a channel layer and a drain layer.
- Semiconductor substrate
- Common source semiconductor layer doped with impurities of a first conductivity type
- Insulating layers and word line structures stacked alternately
- Memory cell dielectric layer penetrating insulating layers and word line structures
- Memory cell structure filling the channel hole with a channel layer and a drain layer
Potential Applications
The technology described in this patent application could be applied in various memory devices, such as flash memory, solid-state drives, and other semiconductor memory applications.
Problems Solved
This technology solves the problem of improving memory cell performance and efficiency by optimizing the structure and materials used in the memory cell design.
Benefits
The benefits of this technology include increased memory cell density, improved data retention, faster read and write speeds, and overall enhanced performance of semiconductor memory devices.
Potential Commercial Applications
Optimizing memory cell structures and materials can lead to the development of more advanced and efficient semiconductor memory devices for consumer electronics, data storage systems, and other applications.
Possible Prior Art
One possible prior art in semiconductor memory technology is the use of floating gate transistors in flash memory devices, which store data by trapping electrons in a floating gate insulated from the control gate.
=== What are the specific impurities used in the common source semiconductor layer? The specific impurities used in the common source semiconductor layer are of a first conductivity type, which could be either p-type or n-type dopants depending on the desired characteristics of the memory device.
=== How does the memory cell dielectric layer contribute to the performance of the memory cell structure? The memory cell dielectric layer helps to insulate the channel layer and control the flow of charge carriers in the memory cell structure, thereby improving the reliability and efficiency of the memory cell operation.
Original Abstract Submitted
A semiconductor memory device according to the present inventive concept includes: a semiconductor substrate; a common source semiconductor layer doped with impurities of a first conductivity type on the semiconductor substrate; a plurality of insulating layers and a plurality of word line structures alternately stacked on the common source semiconductor layer; and a memory cell dielectric layer penetrating the plurality of insulating layers and the plurality of word line structures and covering an internal wall of a channel hole extending in a vertical direction, and a memory cell structure filling the channel hole. The memory cell structure includes a channel layer, which has the memory cell dielectric layer thereon and fills at least a portion of the channel hole, and a drain layer covering an upper surface of the channel layer, doped with impurities of a second conductivity type, and filling some of an upper portion of the channel hole.
