18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tzung-Yi Tsai of Taoyuan City (TW)
Tsung-Lin Lee of Hsinchu County (TW)
Yen-Ming Chen of Hsin-Chu County (TW)
Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication - A simplified explanation of the abstract
This abstract first appeared for US patent application 18543934 titled 'Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication
Simplified Explanation
The patent application describes different isolation liners for different types of FinFETs and the associated isolation feature fabrication process.
- FinFETs are a type of transistor used in integrated circuits for improved performance.
- The method involves etching trenches on a substrate to form fins, then applying oxide and nitride liners over the fins.
- After removing the nitride liner, an isolation material is filled in the trenches and then recessed to form isolation features.
- The process allows for tailored isolation liners for different FinFET regions, improving device performance and reliability.
Potential Applications
This technology can be applied in the semiconductor industry for manufacturing advanced FinFET devices with improved isolation features.
Problems Solved
This technology solves the problem of providing effective isolation for different types of FinFETs, enhancing device performance and reliability.
Benefits
The benefits of this technology include improved device performance, reliability, and customization of isolation features for different FinFET regions.
Potential Commercial Applications
Potential commercial applications of this technology include the production of high-performance integrated circuits for various electronic devices.
Possible Prior Art
Prior art may include similar methods for fabricating isolation features in FinFET devices, but this specific combination of isolation liners and fabrication process may be novel.
Unanswered Questions
How does this technology compare to existing methods for fabricating isolation features in FinFET devices?
This article does not provide a direct comparison to existing methods, leaving room for further analysis of the advantages and disadvantages of this new approach.
What are the specific performance improvements achieved by using tailored isolation liners for different FinFET regions?
The article does not delve into specific performance metrics or comparisons, leaving a gap in understanding the exact benefits of this technology in practical applications.
Original Abstract Submitted
Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).
