View source for 18542093. SWITCHING CONTROL ALGORITHMS ON DETECTION OF EXPOSURE OF UNDERLYING LAYER DURING POLISHING simplified abstract (Applied Materials, Inc.)

=SWITCHING CONTROL ALGORITHMS ON DETECTION OF EXPOSURE OF UNDERLYING LAYER DURING POLISHING=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Kun Xu of Sunol CA (US)|Kun Xu of Sunol CA (US)]][[Category:Kun Xu of Sunol CA (US)]]

[[:Category:Harry Q. Lee of Los Altos CA (US)|Harry Q. Lee of Los Altos CA (US)]][[Category:Harry Q. Lee of Los Altos CA (US)]]

[[:Category:Benjamin Cherian of San Jose CA (US)|Benjamin Cherian of San Jose CA (US)]][[Category:Benjamin Cherian of San Jose CA (US)]]

[[:Category:David Maxwell Gage of Sunnyvale CA (US)|David Maxwell Gage of Sunnyvale CA (US)]][[Category:David Maxwell Gage of Sunnyvale CA (US)]]

==SWITCHING CONTROL ALGORITHMS ON DETECTION OF EXPOSURE OF UNDERLYING LAYER DURING POLISHING - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18542093 titled 'SWITCHING CONTROL ALGORITHMS ON DETECTION OF EXPOSURE OF UNDERLYING LAYER DURING POLISHING

==Simplified Explanation==

The patent application describes a method of controlling polishing of conductive layers on a substrate using an in-situ eddy current monitoring system to measure and calculate polishing rates, make adjustments to polishing parameters, and detect changes in polishing rates to prevent damage to underlying layers.

* Polishing a stack of adjacent conductive layers on a substrate
* Measuring and calculating polishing rates using an in-situ eddy current monitoring system
* Making adjustments to polishing parameters based on current polishing rates
* Detecting changes in polishing rates to prevent damage to underlying layers

== Potential Applications ==
The technology can be applied in semiconductor manufacturing, specifically in the fabrication of integrated circuits where precise polishing of conductive layers is crucial.

== Problems Solved ==
1. Preventing damage to underlying layers during the polishing process.
2. Ensuring uniformity and accuracy in the polishing of conductive layers on substrates.

== Benefits ==
1. Improved control and accuracy in the polishing process.
2. Enhanced quality and reliability of the final product.
3. Cost savings by reducing the need for rework or material wastage.

== Potential Commercial Applications ==
Optimizing Polishing Process for Conductive Layers in Semiconductor Manufacturing

== Possible Prior Art ==
Prior art may include similar methods of in-situ monitoring and control systems for polishing processes in semiconductor manufacturing.

=== Unanswered Questions ===

=== How does this technology compare to traditional polishing methods in terms of efficiency and cost-effectiveness? ===
The article does not provide a direct comparison between this technology and traditional polishing methods. Further research or testing may be needed to evaluate the efficiency and cost-effectiveness of this innovation.

=== What are the specific parameters and algorithms used in the control system to make adjustments during the polishing process? ===
The article mentions the use of control algorithms for adjusting polishing parameters, but it does not detail the specific parameters or algorithms employed. Additional information on this aspect would be beneficial for a deeper understanding of the technology.


==Original Abstract Submitted==

A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing values repeatedly during polishing, calculating one or more adjustments for one or more polishing parameters based on a current polishing rate using a first control algorithm for an initial time period, detecting a change in the polishing rate that indicates exposure of the underlying conductive layer, and calculating one or more adjustments for one or more polishing parameters based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.



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