18540987. COMPOSITE AND TRANSISTOR simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 COMPOSITE AND TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPOSITE AND TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
COMPOSITE AND TRANSISTOR
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
COMPOSITE AND TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18540987 titled 'COMPOSITE AND TRANSISTOR
Simplified Explanation
The patent application describes a novel composite oxide semiconductor material with a first region containing indium, element M (Al, Ga, Y, or Sn), and zinc, and a plurality of second regions with higher indium concentration for increased conductivity.
- The composite oxide semiconductor material consists of a first region with indium, element M, and zinc, and multiple second regions with higher indium content.
- The second regions have higher conductivity due to their higher indium concentration compared to the first region.
- The second regions overlap at the end portions and are surrounded by the first region in a three-dimensional arrangement.
Potential Applications
The technology could be applied in:
- Semiconductor devices
- Solar cells
- Thin-film transistors
Problems Solved
The technology addresses the need for improved conductivity in composite oxide semiconductors.
Benefits
- Higher conductivity
- Enhanced performance in electronic devices
- Improved efficiency in energy conversion
Potential Commercial Applications
"Composite Oxide Semiconductor Material for Enhanced Conductivity" could find applications in:
- Electronics industry
- Renewable energy sector
- Semiconductor manufacturing companies
Possible Prior Art
No prior art is known at this time.
Unanswered Questions
How does the manufacturing process of this composite oxide semiconductor material compare to traditional methods?
The patent application does not provide details on the manufacturing process and whether it is cost-effective or scalable.
What specific electronic devices could benefit the most from this technology?
The application mentions general applications like semiconductor devices and solar cells, but it does not specify which specific devices could see the most significant improvements.
Original Abstract Submitted
A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.
