View source for 18540075. INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

=INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME=


==Organization Name==

[[:Category:Samsung Electronics Co., Ltd.|Samsung Electronics Co., Ltd.]]


[[Category:Samsung Electronics Co., Ltd.]]

==Inventor(s)==

[[:Category:Joonyoung Choi of Suwon-si (KR)|Joonyoung Choi of Suwon-si (KR)]][[Category:Joonyoung Choi of Suwon-si (KR)]]

==INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18540075 titled 'INTEGRATED CIRCUIT DEVICES AND METHODS OF MANUFACTURING THE SAME

==Simplified Explanation==

The integrated circuit device described in the patent application includes a substrate with an active area, a bit line, a direct contact connecting the bit line to the active area, a spacer structure on the sidewalls of the bit line and direct contact, and a field passivation layer between the sidewalls of the direct contact and the spacer structure. The field passivation layer may consist of nonstoichiometric silicon oxide SiOx, where 0.04≤x≤0.4, with a thickness of less than about 25 Å.

* The patent application describes an integrated circuit device with a unique field passivation layer made of nonstoichiometric silicon oxide SiOx.
* The field passivation layer is designed to have a thickness of less than about 25 Å, providing effective passivation for the integrated circuit device.

== Potential Applications ==
The technology described in the patent application could be applied in:
* Semiconductor manufacturing
* Integrated circuit design
* Electronic device production

== Problems Solved ==
The technology addresses the following issues:
* Ensuring proper electrical coupling between the bit line and active area
* Providing effective passivation for the integrated circuit device

== Benefits ==
The benefits of this technology include:
* Improved performance and reliability of integrated circuit devices
* Enhanced protection against environmental factors
* Simplified manufacturing processes

== Potential Commercial Applications ==
The technology could be utilized in various commercial applications such as:
* Consumer electronics
* Telecommunications equipment
* Automotive electronics

== Possible Prior Art ==
One possible prior art for this technology could be the use of conventional passivation layers in integrated circuit devices. However, the specific composition and thickness of the field passivation layer described in this patent application may represent a novel approach to addressing passivation and electrical coupling challenges in integrated circuits.

=== Unanswered Questions ===

== How does the nonstoichiometric silicon oxide SiOx compare to traditional passivation materials in terms of performance and reliability in integrated circuit devices? ==
The article does not provide a direct comparison between the nonstoichiometric silicon oxide SiOx and traditional passivation materials commonly used in integrated circuit devices. Further research or testing may be needed to evaluate the performance and reliability of this novel material.

== What impact does the thickness of the field passivation layer have on the overall functionality of the integrated circuit device? ==
While the patent application mentions that the field passivation layer has a thickness of less than about 25 Å, it does not delve into the specific implications of this thickness on the functionality of the integrated circuit device. Understanding the relationship between the thickness of the passivation layer and device performance could be crucial for optimizing the design of future integrated circuits.


==Original Abstract Submitted==

An integrated circuit device includes a substrate having an active area therein, a bit line on the substrate, and a direct contact, which extends between the active area and the bit line and electrically couples the bit line to a portion of the active area. A spacer structure is also provided, which extends on sidewalls of the bit line and on sidewalls of the direct contact. Afield passivation layer is provided, which extends between the sidewalls of the direct contact and the spacer structure. The spacer structure and the field passivation layer may include different materials, and the field passivation layer may directly contact the sidewalls of the direct contact. The field passivation layer can include nonstoichiometric silicon oxide SiO, where 0.04≤x≤0.4, and may have a thickness of less than about 25 Å.



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