18539062. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Gihee Cho of Yongin-si (KR)

Sanghyuck Ahn of Daegu (KR)

Hyun-Suk Lee of Suwon-si (KR)

Jungoo Kang of Seoul (KR)

Jin-Su Lee of Hwaseong-si (KR)

Hongsik Chae of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18539062 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode includes a first portion with a seam and a second portion on top of the first portion, with the top end of the second portion lower than the upper surface of the supporting pattern, and a portion of the bottom end of the second portion exposed to the seam.

  • Bottom electrode with a seam and a second portion on top
  • Top end of the second portion lower than the supporting pattern
  • Portion of the bottom end of the second portion exposed to the seam

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as integrated circuits, sensors, and memory devices.

Problems Solved

This innovation helps in improving the performance and reliability of semiconductor devices by providing a more stable and efficient electrode structure.

Benefits

The benefits of this technology include enhanced device performance, increased durability, and improved overall functionality of semiconductor devices.

Potential Commercial Applications

  • Advanced electronic devices
  • Semiconductor manufacturing industry

Possible Prior Art

One possible prior art could be the use of similar electrode structures in semiconductor devices to improve performance and reliability.

Unanswered Questions

How does this technology compare to existing electrode structures in terms of efficiency and reliability?

The article does not provide a direct comparison with existing electrode structures in semiconductor devices.

What specific electronic applications could benefit the most from this technology?

The article does not specify the particular electronic applications that could benefit the most from this innovation.


Original Abstract Submitted

A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.