18538641. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Isamu Nishimura of Kyoto-shi (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18538641 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes multiple layers and elements, such as resin layers, wiring layers, semiconductor layers, and semiconductor elements. The device is designed to be compact and efficient in terms of electrical connections and functionality.
- The semiconductor device includes a first resin layer with a first obverse surface, a first wiring layer, a semiconductor layer, and a semiconductor element.
- The semiconductor element has an electrode connected to the semiconductor layer and bonded to the first wiring layer.
- The device also features a second resin layer with a second obverse surface, a second wiring layer connected to the semiconductor layer, and extending across the outer edge of the semiconductor layer.
Potential Applications
This technology can be applied in various electronic devices, such as smartphones, tablets, laptops, and other portable electronics requiring compact and efficient semiconductor components.
Problems Solved
This technology solves the problem of optimizing space and electrical connections in semiconductor devices, leading to improved performance and reliability in electronic devices.
Benefits
The benefits of this technology include compact design, efficient electrical connections, improved performance, and reliability in electronic devices.
Potential Commercial Applications
The potential commercial applications of this technology include consumer electronics, automotive electronics, industrial automation, and other fields requiring advanced semiconductor devices.
Possible Prior Art
One possible prior art in this field is the development of multi-layer semiconductor devices with optimized electrical connections and compact design.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and reliability. Further research and testing may be needed to evaluate the technology's advantages over current solutions.
What are the specific manufacturing processes involved in producing this semiconductor device?
The article does not delve into the specific manufacturing processes used to produce this semiconductor device. Understanding the manufacturing techniques can provide insights into the scalability and cost-effectiveness of the technology.
Original Abstract Submitted
A semiconductor device includes a first resin layer having a first obverse surface facing in a thickness direction, a first wiring layer facing the first obverse surface, a semiconductor layer, and a semiconductor element. The semiconductor element includes an electrode electrically connected to the semiconductor layer and facing the first obverse surface and is electrically bonded at the electrode to the first wiring layer. The semiconductor device further includes a second resin layer having a second obverse surface facing the same side as the first obverse surface in the thickness direction, and a second wiring layer facing the second obverse surface and electrically connected to the semiconductor layer. The second wiring layer is in contact with the semiconductor layer. The second wiring layer extends across an outer edge of the semiconductor layer as viewed in the thickness direction.
