18536313. COMPOSITE OXIDE AND TRANSISTOR simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 COMPOSITE OXIDE AND TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 COMPOSITE OXIDE AND TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
COMPOSITE OXIDE AND TRANSISTOR
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Shunpei Yamazaki of Setagaya (JP)
COMPOSITE OXIDE AND TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18536313 titled 'COMPOSITE OXIDE AND TRANSISTOR
Simplified Explanation
The patent application describes a novel material, a composite oxide, and a transistor using this material. The composite oxide includes at least two regions, one with elements In, Zn, and M1, and the other with elements In, Zn, and M2. The proportions of M1 and M2 differ in each region, leading to an asymmetric X-ray diffraction pattern.
- The composite oxide includes regions with different proportions of elements M1 and M2.
- The X-ray diffraction pattern of the composite oxide is asymmetric.
Potential Applications
The novel material could be used in:
- Advanced electronic devices
- High-performance transistors
Problems Solved
This technology addresses:
- Improving transistor performance
- Enhancing material properties
Benefits
The benefits of this technology include:
- Increased efficiency in electronic devices
- Enhanced material characteristics
Potential Commercial Applications
The technology could be applied in:
- Semiconductor industry for high-performance transistors
- Electronics manufacturing for advanced devices
Possible Prior Art
Prior research on composite oxides in electronic applications may exist, but specific prior art is not provided in the abstract.
Unanswered Questions
What specific electronic devices could benefit from this novel material?
Potential applications in consumer electronics, telecommunications, or aerospace industries could be explored further.
How does the asymmetric X-ray diffraction pattern impact the performance of the transistor?
Further research is needed to understand the relationship between the material structure and the transistor functionality.
Original Abstract Submitted
A novel material and a transistor using a novel material are provided. A composite oxide includes at least two regions, one of which includes In, Zn and an element M1 (the element M1 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu), and the other of which includes In, Zn, and an element M2 (the element M2 is one or more of Al, Ga, Si, B, Y, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu). The proportion of the element M1 to In, Zn, and the element M1 in the region including the element M1 is less than that of the element M2 to In, Zn, and the element M2 in the region including the element M2. In an analysis of the composite oxide by X-ray diffraction, the diffraction pattern result in the X-ray diffraction is asymmetric with the angle at which the peak intensity of X-ray diffraction is detected as the symmetry axis.
