18535274. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Krishna Kumar Bhuwalka of Suwon-si (KR)
Takeshi Okagaki of Hwaseong-si (KR)
Dong Won Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18535274 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes channel layers on a substrate, gate electrode surrounding the channel layers, and a source/drain layer in contact with the channel layers. The source/drain layer protrudes further than the gate electrode in one direction, with different distances from the gate electrode to the channel layers on each side.
- Channel layers on a substrate
- Gate electrode surrounding the channel layers
- Source/drain layer in contact with the channel layers
- Source/drain layer protrudes further than the gate electrode in one direction
- Different distances from the gate electrode to the channel layers on each side
Potential Applications
The technology described in the patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as integrated circuits, sensors, and memory devices.
Problems Solved
This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the design and configuration of the channel layers, gate electrode, and source/drain layer.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in electronic devices utilizing these semiconductor components.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of high-performance electronic devices, which could be used in consumer electronics, telecommunications, automotive, and other sectors.
Possible Prior Art
One possible prior art for this technology could be the development of similar semiconductor devices with channel layers, gate electrodes, and source/drain layers, but with different configurations and structures.
Unanswered Questions
How does this technology compare to existing semiconductor devices on the market?
This article does not provide a direct comparison to existing semiconductor devices, making it difficult to assess the competitive advantage of this technology in the market.
What are the specific performance improvements achieved by this technology compared to traditional semiconductor devices?
The article does not detail the specific performance improvements achieved by this technology, leaving unanswered questions about its potential impact on device efficiency and functionality.
Original Abstract Submitted
A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.
