18526454. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tzu-Yu Chen of Kaohsiung City (TW)

Sheng-Hung Shih of Hsinchu City (TW)

Fu-Chen Chang of New Taipei City (TW)

Kuo-Chi Tu of Hsinchu City (TW)

Wen-Ting Chu of Kaohsiung City (TW)

Alexander Kalnitsky of San Francisco CA (US)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526454 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is located on top of the substrate, followed by the ferroelectric layer, the noble metal electrode, and finally the non-noble metal electrode.

  • Substrate: The base material on which the semiconductor device is built.
  • Bottom electrode: Positioned on top of the substrate to provide a foundation for the device.
  • Ferroelectric layer: A layer with unique properties that can be polarized to store information.
  • Noble metal electrode: Placed over the ferroelectric layer to facilitate electrical connections.
  • Non-noble metal electrode: Positioned on top of the noble metal electrode to complete the device structure.

Potential Applications

The technology described in this patent application could be utilized in:

  • Memory devices
  • Sensors
  • Actuators

Problems Solved

This technology helps in:

  • Enhancing data storage capabilities
  • Improving sensor sensitivity
  • Increasing actuator efficiency

Benefits

The benefits of this technology include:

  • Higher performance in memory devices
  • Increased accuracy in sensors
  • Improved functionality in actuators

Potential Commercial Applications

A potential commercial application for this technology could be in:

  • Consumer electronics
  • Automotive industry
  • Aerospace sector

Possible Prior Art

One possible prior art for this technology could be the use of similar electrode configurations in other semiconductor devices.

Unanswered Questions

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices to evaluate its performance and efficiency.

What are the potential limitations or challenges in implementing this technology on a larger scale for commercial production?

The article does not address the potential limitations or challenges that may arise when scaling up this technology for commercial production.


Original Abstract Submitted

A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.

Retrieved from "http://wikipatents.org/index.php?title=18526454._SEMICONDUCTOR_DEVICE_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=51039"