18526422. SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chia-Ming Pan of Tainan City (TW)

Chia-Ta Hsieh of Tainan City (TW)

Po-Wei Liu of Tainan City (TW)

Yun-Chi Wu of Tainan City (TW)

SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526422 titled 'SEMICONDUCTOR STRUCTURE

Simplified Explanation

The semiconductor structure described in the patent application includes a semiconductor substrate with isolation structures and a conductive feature. The isolation structures are spaced apart from each other and surround a region of the semiconductor substrate. The conductive feature extends vertically between the isolation structures, with a rounded corner adjacent to one of the isolation structure sidewalls.

• The semiconductor structure comprises a semiconductor substrate, isolation structures, and a conductive feature.
• The isolation structures are spaced apart and surround a region of the semiconductor substrate.
• The conductive feature extends vertically between the isolation structures, with a rounded corner adjacent to one of the isolation structure sidewalls.

Potential Applications

This technology could be applied in:

• Semiconductor devices
• Integrated circuits
• Microprocessors

Problems Solved

This technology helps in:

• Improving isolation between components
• Enhancing conductivity within the semiconductor substrate

Benefits

The benefits of this technology include:

• Increased efficiency in semiconductor devices
• Better performance of integrated circuits
• Enhanced reliability of microprocessors

Potential Commercial Applications

The potential commercial applications of this technology could be in:

• Electronics industry
• Semiconductor manufacturing companies
• Technology research and development firms

Possible Prior Art

One possible prior art for this technology could be:

• Semiconductor structures with isolation features and conductive elements

What are the specific dimensions of the isolation structures and the conductive feature in the semiconductor structure described in the patent application?

The specific dimensions of the isolation structures and the conductive feature are not provided in the abstract of the patent application.

How does the rounded corner of the conductive feature contribute to the overall performance of the semiconductor structure?

The rounded corner of the conductive feature helps in reducing stress concentrations and improving the overall reliability of the semiconductor structure.

Original Abstract Submitted

A semiconductor structure includes a semiconductor substrate, first to third isolation structures, and a conductive feature. The first to third isolation structures are over the semiconductor substrate and spaced apart from each other. The semiconductor substrate comprises a region surrounded by a sidewall of the first isolation structure and a first sidewall of the second isolation structure. The conductive feature extends vertically in the semiconductor substrate and between the between the second and third isolation structures, wherein the conductive feature has a rounded corner adjoining a second sidewall of the second isolation structure opposite the first sidewall of the second isolation structure.