18526324. DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Wei-Yi Hu of Hsinchu (TW)

Chih-Ming Chao of Hsinchu (TW)

Jung-Chou Tsai of Hsinchu (TW)

DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18526324 titled 'DEVICES WITH TRACK-BASED FILL (TBF) METAL PATTERNING

Simplified Explanation

The abstract describes a semiconductor device with an interconnection pattern that includes parallel conductors and dummy patterns.

  • The interconnection pattern includes a first conductor aligned with a first axis and a first dummy pattern aligned with a second axis on a first side of the first axis.
  • The first dummy pattern is offset from the first axis by an axis offset distance and includes N dummy conductors with a specific length and spacing.

Potential Applications

The technology described in this patent application could be applied in the semiconductor industry for the development of advanced interconnection patterns in electronic devices.

Problems Solved

This technology solves the problem of optimizing the layout and design of interconnection patterns in semiconductor devices to improve performance and efficiency.

Benefits

The benefits of this technology include enhanced functionality, increased reliability, and improved overall performance of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of high-performance electronic devices such as smartphones, tablets, computers, and other consumer electronics.

Possible Prior Art

One possible prior art in this field could be the use of dummy patterns in semiconductor devices to improve signal integrity and reduce crosstalk between conductors.

Unanswered Questions

How does this technology compare to existing interconnection patterns in terms of performance and efficiency?

This article does not provide a direct comparison with existing interconnection patterns in semiconductor devices.

What are the specific manufacturing processes required to implement this interconnection pattern in semiconductor devices?

The article does not delve into the specific manufacturing processes involved in implementing this interconnection pattern.


Original Abstract Submitted

Disclosed are semiconductor devices having an interconnection pattern that includes a plurality of parallel conductors including a first conductor aligned with a first axis and a first dummy pattern aligned with a second axis on a first side of the first axis and offset from the first axis by an axis offset distance Lin which the first dummy pattern includes N dummy conductors having a first dummy conductor length Lwith the dummy conductors being separated by a dummy conductor-to-dummy conductor spacing EE.