18524767. FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING simplified abstract (TOKYO ELECTRON LIMITED)
Contents
- 1 FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING
Organization Name
Inventor(s)
Kazuhide Hasebe of Yamanashi (JP)
Shigeru Nakajima of Yamanashi (JP)
Hiroki Murakami of Yamanashi (JP)
FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18524767 titled 'FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING
Simplified Explanation
The abstract describes a method for forming mask patterns by processing a resist film into resist patterns with a predetermined pitch, slimming the resist patterns, and forming an oxide film on the thin film and resist patterns using a film deposition apparatus.
- Resist film is formed over a thin film.
- Resist film is processed into resist patterns with a predetermined pitch.
- Slimming of the resist patterns is performed.
- An oxide film is formed on the thin film and resist patterns using a film deposition apparatus.
- Source gas and an oxygen radical or an oxygen-containing gas are supplied during the oxide film formation.
Potential Applications
This technology can be applied in semiconductor manufacturing processes, specifically in the production of integrated circuits and other electronic devices.
Problems Solved
This method helps in achieving precise mask patterns with a predetermined pitch, which is crucial for the functionality and performance of semiconductor devices.
Benefits
- Improved accuracy and precision in mask pattern formation. - Enhanced efficiency in semiconductor manufacturing processes. - Enables the production of high-quality electronic devices.
Potential Commercial Applications
- Optimizing Mask Pattern Formation in Semiconductor Manufacturing*
Possible Prior Art
There may be prior art related to methods of forming mask patterns in semiconductor manufacturing processes using film deposition techniques.
Unanswered Questions
How does this method compare to traditional mask pattern forming techniques in terms of efficiency and accuracy?
This method offers improved efficiency and accuracy compared to traditional techniques by continuously performing slimming and oxide film formation in the same apparatus.
What are the specific parameters for the source gas and oxygen-containing gas that need to be controlled during the oxide film formation process?
The specific parameters for the source gas and oxygen-containing gas, such as flow rates and concentrations, need to be optimized to ensure the desired properties of the oxide film.
Original Abstract Submitted
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
