18524242. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Kuei-Yu Kao of Hsinchu (TW)

Chen-Yui Yang of Hsinchu City (TW)

Hsien-Chung Huang of Hsinchu City (TW)

Chao-Cheng Chen of Hsinchu City (TW)

Shih-Yao Lin of New Taipei City (TW)

Chih-Chung Chiu of Hsinchu City (TW)

Chih-Han Lin of Hsinchu City (TW)

Chen-Ping Chen of Toucheng Township (TW)

Ke-Chia Tseng of Hsinchu City (TW)

Ming-Ching Chang of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18524242 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes multiple vertically separated channel layers, an active gate structure with lower and upper portions, a gate spacer along the sidewall of the upper portion, and a dummy gate dielectric layer between the gate spacer and the topmost channel layer. The dummy gate dielectric layer is in contact with the top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

• The semiconductor device has a unique structure with multiple channel layers and an active gate structure that wraps around each channel layer.
• The gate spacer and dummy gate dielectric layer help control the flow of current through the device.
• The design of the semiconductor device allows for efficient operation and performance.

Potential Applications

This technology could be applied in advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

This technology addresses the need for improved control and efficiency in semiconductor devices with multiple channel layers.

Benefits

The semiconductor device offers enhanced performance, efficiency, and control over current flow, leading to better overall device operation.

Potential Commercial Applications

This technology could be valuable in the development of next-generation electronics, data processing systems, and communication devices.

Possible Prior Art

One possible prior art could be the use of gate spacers and dummy gate dielectric layers in semiconductor devices to control current flow and improve device performance.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor device structures to evaluate performance and efficiency differences.

What are the potential challenges or limitations of implementing this technology in practical applications?

The article does not discuss any potential challenges or limitations that may arise when implementing this technology in real-world applications.

Original Abstract Submitted

A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.