18522564. MEMORY CIRCUIT AND METHOD OF OPERATING SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chun-Hao Chang of Hsinchu (TW)
MEMORY CIRCUIT AND METHOD OF OPERATING SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18522564 titled 'MEMORY CIRCUIT AND METHOD OF OPERATING SAME
Simplified Explanation
The memory circuit described in the abstract includes a non-volatile memory cell, a comparator, and a detection circuit. The comparator generates a first output signal based on the non-volatile memory cell's state, while the detection circuit latches the output signal and disrupts the current path between the memory cell and the comparator.
- Non-volatile memory cell
- Comparator with first input and output terminals
- Detection circuit latching the output signal
- First inverter generating an inverted output signal
Potential Applications
The memory circuit could be used in:
- Embedded systems
- IoT devices
- Wearable technology
Problems Solved
This technology addresses issues such as:
- Data loss in non-volatile memory
- Efficient power consumption
- Reliable memory storage
Benefits
The benefits of this memory circuit include:
- Non-volatile memory retention
- Low power consumption
- High reliability
Potential Commercial Applications
This technology could be applied in:
- Consumer electronics
- Automotive systems
- Medical devices
Possible Prior Art
One possible prior art for this technology is:
- Memory circuits with non-volatile memory cells and comparators
What is the manufacturing cost of implementing this memory circuit in mass production?
The manufacturing cost of implementing this memory circuit in mass production would depend on factors such as the complexity of the circuit design, the cost of materials, and the production volume. Companies would need to conduct a cost analysis to determine the exact manufacturing cost.
How does this memory circuit compare to other non-volatile memory technologies in terms of speed and reliability?
This memory circuit may offer advantages in terms of speed and reliability compared to other non-volatile memory technologies. The use of a comparator and detection circuit could potentially enhance the speed of data retrieval and improve the reliability of data storage. Further testing and comparisons would be needed to provide a definitive answer.
Original Abstract Submitted
A memory circuit includes a non-volatile memory cell, a comparator and a detection circuit. The comparator is coupled to the non-volatile memory cell, and configured to generate a first output signal. The comparator including a first input terminal and a first output terminal. The first input terminal is coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage. The first output terminal is configured to output the first output signal. The detection circuit is coupled to the comparator and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between at least the non-volatile memory cell and the comparator. The detection circuit includes a first inverter coupled to the first output terminal of the comparator and configured to generate an inverted first output signal.
