18521701. SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chang-Miao Liu of Hsinchu City (TW)
Ying-Keung Leung of Hsinchu City (TW)
Huiling Shang of Hsinchu City (TW)
Youbo Lin of Ridgefield CT (US)
SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521701 titled 'SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a method for forming a silicide on a semiconductor material in a device, including a gate structure and a source/drain feature adjacent to the gate structure. Here are the key points of the innovation:
- Device includes gate structure and source/drain feature
- Insulating layer (e.g., CESL, ILD) formed over source/drain feature
- Trench etched in insulating layer to expose surface of source/drain feature
- Semiconductor material formed in trench on surface of source/drain feature
- Semiconductor material converted to a silicide
Potential Applications
The technology described in the patent application could be applied in the manufacturing of semiconductor devices, particularly in the production of integrated circuits and other electronic components.
Problems Solved
This technology solves the problem of efficiently and effectively forming a silicide on a semiconductor material in a device, which is crucial for enhancing the performance and functionality of semiconductor devices.
Benefits
The benefits of this technology include improved conductivity, reduced resistance, and enhanced overall performance of semiconductor devices. Additionally, the method described in the patent application offers a cost-effective and reliable way to form silicides on semiconductor materials.
Potential Commercial Applications
- "Innovative Method for Silicide Formation in Semiconductor Devices" - A Game-Changer in Semiconductor Manufacturing
Possible Prior Art
There may be prior art related to methods for forming silicides on semiconductor materials in devices, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing methods for forming silicides on semiconductor materials?
The article does not provide a direct comparison with existing methods for forming silicides on semiconductor materials. It would be helpful to understand the advantages and limitations of this new method in comparison to traditional techniques.
What are the specific semiconductor materials that can be used in this process, and are there any limitations or compatibility issues?
The patent application does not specify the types of semiconductor materials that can be used in this process. It would be beneficial to know if there are any restrictions or compatibility issues with certain semiconductor materials.
Original Abstract Submitted
A method including providing a device including a gate structure and a source/drain feature adjacent to the gate structure. An insulating layer (e.g., CESL, ILD) is formed over the source/drain feature. A trench is etched in the insulating layer to expose a surface of the source/drain feature. A semiconductor material is then formed in the etched trench on the surface of the source/drain feature. The semiconductor material is converted to a silicide.
