18521509. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor structures in terms of manufacturing cost and complexity?
- 1.11 What are the potential limitations or drawbacks of this semiconductor structure in practical applications?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Akimasa Kinoshita of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521509 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor structure with n-type source regions, low-concentration regions, and p-type contact regions selectively provided in surface regions of a semiconductor substrate. These regions are in contact with a source electrode and are arranged in a specific configuration to improve short-circuit withstand capability without increasing the number of processes.
- N-type source regions, low-concentration regions, and p-type contact regions are selectively provided in surface regions of a semiconductor substrate.
- N-type source regions and low-concentration regions are in contact with a gate insulating film at the sidewalls of a trench and are adjacent to channel portions of a p-type base region.
- P-type contact regions are disposed apart from the trench.
- Low-concentration regions are configured in surface regions of an epitaxial layer, periodically along the trench between the trench and the p-type contact regions.
Potential Applications
This technology could be applied in the semiconductor industry for the manufacturing of high-performance electronic devices such as power transistors, integrated circuits, and other semiconductor components.
Problems Solved
This technology solves the problem of improving short-circuit withstand capability in semiconductor devices without the need for additional manufacturing processes.
Benefits
The described structure enhances the reliability and performance of semiconductor devices by optimizing the configuration of n-type source regions, low-concentration regions, and p-type contact regions.
Potential Commercial Applications
The technology could find applications in the production of advanced electronic devices for various industries, including telecommunications, automotive, consumer electronics, and more.
Possible Prior Art
One possible prior art could be the use of different doping profiles in semiconductor devices to improve performance and reliability. However, the specific configuration described in this patent application may offer unique advantages in terms of short-circuit withstand capability.
Unanswered Questions
How does this technology compare to existing semiconductor structures in terms of manufacturing cost and complexity?
The patent application does not provide information on the cost implications or complexity of implementing this technology compared to existing semiconductor structures.
What are the potential limitations or drawbacks of this semiconductor structure in practical applications?
The patent application does not address any potential limitations or drawbacks of the described semiconductor structure that may arise in practical applications, such as temperature sensitivity or compatibility with other components.
Original Abstract Submitted
N-type source regions, low-concentration regions, and p-type contact regions are each selectively provided in surface regions of a semiconductor substrate, at a front surface thereof, and are in contact with a source electrode. The n-type source regions and the low-concentration regions are in contact with a gate insulating film at sidewalls of a trench and are adjacent to channel portions of a p-type base region, in a depth direction. The p-type contact regions are disposed apart from the trench. In surface regions of an epitaxial layer constituting the p-type base region, portions left free of the n-type source regions and the p-type contact regions configure the low-concentration regions of an n-type or a p-type. The low-concentration regions are disposed periodically along the trench, between the trench and the p-type contact regions. By the described structure, short-circuit withstand capability may be increased without increasing the number of processes.
