18521399. GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Tai-Yen Peng of Hsinchu (TW)

Yu-Shu Chen of Hsinchu (TW)

Sin-Yi Yang of Taichung City (TW)

Chen-Jung Wang of Hsinchu (TW)

Chien Chung Huang of Taichung City (TW)

Han-Ting Lin of Hsinchu (TW)

Jyu-Horng Shieh of Hsinchu (TW)

Qiang Fu of Hsinchu (TW)

GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18521399 titled 'GRADIENT PROTECTION LAYER IN MTJ MANUFACTURING

Simplified Explanation

The method described in the patent application involves forming Magnetic Tunnel Junction (MTJ) stack layers by depositing various layers in a specific order and then patterning the stack layers to form a MTJ. A passivation process is then performed on the sidewall of the MTJ to create a protection layer by reacting sidewall surface portions with a process gas containing elements like oxygen, nitrogen, carbon, or combinations thereof.

• Formation of Magnetic Tunnel Junction (MTJ) stack layers
• Patterning of the MTJ stack layers to form a MTJ
• Performing a passivation process on the sidewall of the MTJ to create a protection layer

Potential Applications

The technology described in the patent application could be applied in:

• Magnetic storage devices
• Magnetic sensors
• Spintronics devices

Problems Solved

The technology addresses the issue of protecting the MTJ structure from environmental factors that could degrade its performance over time.

Benefits

The passivation process helps in enhancing the durability and reliability of the MTJ structure, leading to improved device performance and longevity.

Potential Commercial Applications

The technology could find applications in:

• Data storage industry
• Semiconductor manufacturing
• Electronics industry

Possible Prior Art

One possible prior art could be the use of passivation processes in semiconductor manufacturing to protect sensitive structures from environmental degradation.

How does the passivation process impact the overall performance of the MTJ structure?

The article does not delve into the specific effects of the passivation process on the functionality and efficiency of the MTJ structure.

Are there any limitations or drawbacks associated with the proposed method of passivation?

The article does not mention any potential limitations or drawbacks that may arise from implementing the passivation process on the MTJ structure.

Original Abstract Submitted

A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.