18521109. MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Sai-Hooi Yeong of Hsinchu (TW)
Chenchen Jacob Wang of Hsinchu (TW)
MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18521109 titled 'MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The memory device described in the abstract includes various components such as bit lines, word lines, memory cells, source lines, and a controller. The memory cell consists of transistors and data storage elements, with the controller controlling the application of voltages to the source lines during operations.
- Memory cell structure:
* Includes a first transistor, data storage elements, and second transistors. * First transistor has a gate connected to the word line and first and second source/drains. * Data storage elements and corresponding second transistors are in series with the first source/drain and the bit line.
- Controller function:
* Electrically coupled to memory cell components. * Applies a voltage other than ground to source lines during operations.
- Potential Applications:**
- This memory device can be used in various electronic devices such as computers, smartphones, and IoT devices for data storage and retrieval.
- Problems Solved:**
- The memory device provides efficient data storage and retrieval capabilities with controlled voltage application, enhancing overall performance.
- Benefits:**
- Improved data processing speed and reliability. - Enhanced energy efficiency due to optimized voltage control.
- Potential Commercial Applications of this Technology:**
- Data storage devices for consumer electronics. - Embedded memory solutions for industrial applications.
- Possible Prior Art:**
- Previous memory devices with similar transistor and data storage element configurations. - Prior patents related to memory cell structures and voltage control in memory devices.
- Unanswered Questions:**
- 1. How does the controller determine the voltage to be applied to the source lines during operations?**
- The abstract does not provide specific details on the voltage control mechanism employed by the controller.
- 2. Are there any limitations or drawbacks associated with the memory device described in the patent application?**
- The abstract does not mention any potential limitations or drawbacks of the memory device, leaving room for further investigation into its performance under various conditions.
Original Abstract Submitted
A memory device includes at least one bit line, at least one word line, at least one memory cell, at least one source line, and a controller electrically coupled to the at least one memory cell via the at least one word line, the at least one bit line, and the at least one source line. The memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. The first transistor includes a gate electrically coupled to the word line, and first and second source/drains. Each data storage element and the corresponding second transistor are electrically coupled in series with the first source/drain of the first transistor and the bit line. The controller controllably applies a voltage other than a ground voltage to the at least one source line in an operation of a selected data storage element among the data storage elements.
