18520996. Source/Drain Metal Contact and Formation Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 Source/Drain Metal Contact and Formation Thereof
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Source/Drain Metal Contact and Formation Thereof - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Source/Drain Metal Contact and Formation Thereof
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Shih-Chuan Chiu of Hsinchu (TW)
Tien-Lu Lin of Hsinchu City (TW)
Yu-Ming Lin of Hsinchu City (TW)
Chia-Hao Chang of Hsinchu City (TW)
Jia-Chuan You of Taoyuan County (TW)
Source/Drain Metal Contact and Formation Thereof - A simplified explanation of the abstract
This abstract first appeared for US patent application 18520996 titled 'Source/Drain Metal Contact and Formation Thereof
Simplified Explanation
The abstract describes a semiconductor device contact stack that includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack does not include a metal nitride layer in direct contact with the silicide layer.
- Source/drain feature
- Silicide layer wrapping around the source/drain feature
- Seed metal layer in direct contact with the silicide layer
- Conductor in contact with the seed metal layer
Potential Applications
The technology described in the patent application could be applied in the manufacturing of semiconductor devices, such as integrated circuits, memory chips, and processors.
Problems Solved
This innovation solves the problem of improving the contact stack design in semiconductor devices by optimizing the layers involved in the contact structure.
Benefits
The benefits of this technology include enhanced performance, increased efficiency, and improved reliability of semiconductor devices.
Potential Commercial Applications
- "Optimizing Contact Stack Design in Semiconductor Devices for Improved Performance and Reliability"
Possible Prior Art
There may be prior art related to the optimization of contact stack designs in semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing contact stack designs in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing contact stack designs.
What specific semiconductor devices could benefit the most from this improved contact stack design?
The article does not specify which types of semiconductor devices would see the greatest improvement from this technology.
Original Abstract Submitted
A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.
