18519714. SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chen-Ming Lee of Taoyuan County (TW)
Fu-Kai Yang of Hsinchu City (TW)
SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18519714 titled 'SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS OF FABRICATING THEREOF
Simplified Explanation
The patent application describes methods and devices involving an air gap next to a contact element that extends to a source/drain feature of a device. One method involves depositing a dummy layer that is later removed to create the air gap, typically after a SAC dielectric layer like silicon nitride is formed over a metal gate structure.
- Air gap adjacent to contact element
- Dummy layer deposited and removed to form air gap
- SAC dielectric layer like silicon nitride used in the process
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the manufacturing of advanced electronic devices with improved performance and efficiency.
Problems Solved
This technology helps in reducing parasitic capacitance and improving the overall performance of electronic devices by creating an air gap next to the contact element.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption due to reduced parasitic capacitance.
Potential Commercial Applications
Potential commercial applications of this technology could include the production of high-performance integrated circuits, microprocessors, and other electronic devices in the semiconductor industry.
Possible Prior Art
One possible prior art could be the use of sacrificial layers in semiconductor manufacturing processes to create voids or gaps in the structure, although the specific method described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing methods for reducing parasitic capacitance in electronic devices?
This article does not provide a direct comparison with existing methods for reducing parasitic capacitance in electronic devices. It would be helpful to know the specific advantages and limitations of this technology compared to other approaches.
What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?
The article does not address the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes. Understanding any obstacles or constraints could be crucial for assessing the practicality and scalability of this innovation.
Original Abstract Submitted
Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.
