18518670. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company Limited

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Chao-Cheng Chen of Hsinchu City (TW)

Chih-Han Lin of Hsinchu City (TW)

Ming-Ching Chang of Hsinchu City (TW)

Wei-Liang Lu of Hsinchu City (TW)

Kuei-Yu Kao of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18518670 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the abstract features a fin formed over a substrate, a gate structure spanning the fin, and a first source/drain structure connected to one end of the fin. The gate structure includes a portion that protrudes towards the first source/drain structure, with the tip edge of this protrusion vertically above the bottom surface of the gate structure.

• The semiconductor device includes a fin that extends along a first direction over a substrate.
• A gate structure straddles the fin and extends along a second direction perpendicular to the first direction.
• A first source/drain structure is coupled to one end of the fin along the first direction.
• The gate structure has a portion that protrudes towards the first source/drain structure, with the tip edge of this protrusion vertically above the bottom surface of the gate structure.

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as high-performance computing, mobile devices, and communication systems.

Problems Solved

This technology addresses the challenge of improving the performance and efficiency of semiconductor devices by optimizing the design and structure of the gate and source/drain components.

Benefits

The benefits of this technology include enhanced device performance, increased energy efficiency, and potentially reduced manufacturing costs due to improved design and functionality.

Potential Commercial Applications

The technology could find commercial applications in the semiconductor industry for the production of next-generation integrated circuits, processors, and other electronic components.

Possible Prior Art

One possible prior art for this technology could be the development of FinFET (Fin Field-Effect Transistor) structures in semiconductor devices, which also involve fins and gate structures for improved performance.

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor device structures, leaving the reader to speculate on the potential advantages or disadvantages of this new design.

What specific manufacturing processes are required to implement this technology in semiconductor device production?

The article does not delve into the specific manufacturing processes involved in implementing this technology, leaving a gap in understanding for readers interested in the practical aspects of its application.

Original Abstract Submitted

A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.