18518566. SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kaname Mitsuzuka of Matsumoto-city (JP)
Yuki Karamoto of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18518566 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract comprises a gate trench portion, a first trench portion, a drift region, a base region, an emitter region, and a contact region. The contact region in the mesa portion between the gate trench portion and the first trench portion includes a first contact portion and a second contact portion.
- Drift region of a first conductivity type
- Base region of a second conductivity type
- Emitter region of the first conductivity type with higher doping concentration than the drift region
- Contact region of the second conductivity type with higher doping concentration than the base region
- Contact region in the mesa portion with first and second contact portions
Potential Applications
The technology described in the patent application could be used in power semiconductor devices, such as high-voltage transistors and diodes.
Problems Solved
This technology helps improve the performance and efficiency of power semiconductor devices by optimizing the design of the contact region and the mesa portion.
Benefits
- Enhanced power efficiency - Improved device performance - Higher voltage handling capabilities
Potential Commercial Applications
"Optimized Contact Region Design for Power Semiconductor Devices"
Possible Prior Art
There may be prior art related to the optimization of contact regions in power semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing contact region designs in power semiconductor devices?
The article does not provide a direct comparison to existing contact region designs, leaving the reader to wonder about the specific advantages of this new design.
What impact could this technology have on the overall cost of manufacturing power semiconductor devices?
The abstract does not address the potential cost implications of implementing this new design, leaving a gap in understanding the economic feasibility of the technology.
Original Abstract Submitted
Provided is a semiconductor device comprising a gate trench portion and a first trench portion adjacent to the gate trench portion, the semiconductor device comprising: a drift region of a first conductivity type; a base region of a second conductivity type; an emitter region of the first conductivity type that is provided above the base region and has a higher doping concentration than that of the drift region; and a contact region of the second conductivity type that is provided above the base region and has a higher doping concentration than that of the base region. In a mesa portion between the gate trench portion and the first trench portion, the contact region may have a first contact portion and a second contact portion that are provided to extend from the first trench portion to below a lower end of the emitter region.
