18518162. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Hsiao Wen Lee of Hsinchu City (TW)

Ya-Yi Tsai of Hsinchu City (TW)

Shu-Uei Jang of Hsinchu City (TW)

Chih-Han Lin of Hsinchu City (TW)

Shu-Yuan Ku of Zhubei City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18518162 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the patent application includes an isolation region with channels extending through it, an active channel, an inactive channel, a dummy fin between the active and inactive channels, an active gate over both channels, and a dielectric material contacting the top of the dummy fin.

• Isolation region with channels:

 - The device has an isolation region on the substrate with channels extending through it.

• Dummy fin:

 - A dummy fin is placed on the isolation region between the active and inactive channels.

• Active gate and dielectric material:

 - An active gate is positioned over the active and inactive channels, with a dielectric material extending through the gate and contacting the top of the dummy fin.

• Channel orientation:

 - The active channel extends in one direction from the substrate, while the active gate extends in another direction.

• Proximity of dielectric material:

 - The dielectric material is closer to the inactive channel than to the active channel.

Potential Applications

The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and communication systems.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by providing better isolation between active and inactive channels, reducing interference, and enhancing overall device functionality.

Benefits

The benefits of this technology include increased device reliability, improved signal processing capabilities, reduced power consumption, and enhanced overall performance of semiconductor devices.

Potential Commercial Applications

The potential commercial applications of this technology could include the production of high-performance integrated circuits, advanced microprocessors, and other semiconductor components for the electronics industry.

Possible Prior Art

One possible prior art for this technology could be the use of dummy structures in semiconductor devices to improve isolation and reduce interference between different components on the substrate.

How does this technology compare to existing methods of channel isolation in semiconductor devices?

This article does not provide a direct comparison with existing methods of channel isolation in semiconductor devices. It would be helpful to understand the specific advantages and disadvantages of this technology compared to traditional approaches.

What are the specific manufacturing processes involved in implementing this technology in semiconductor device production?

The article does not delve into the specific manufacturing processes required to implement this technology in semiconductor device production. Understanding the manufacturing steps involved could provide insights into the feasibility and scalability of this innovation.

Original Abstract Submitted

A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.