18517277. COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

YU-KUAN Lin of Hsinchu (TW)

CHANG-TA Yang of Hsinchu (TW)

PING-WEI Wang of Hsinchu (TW)

KUO-YI Chao of Hsinchu (TW)

MEI-YUN Wang of Hsinchu (TW)

COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18517277 titled 'COMPACT ELECTRICAL CONNECTION THAT CAN BE USED TO FORM AN SRAM CELL AND METHOD OF MAKING THE SAME

Simplified Explanation

The integrated circuit structure described in the patent application involves a first transistor with a gate overlying a channel region, a source region, and a drain region. A conductive contact is connected to the drain region of the first transistor. Adjacent to the first transistor is a second transistor with its own channel region, source region, and drain region. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to connect the drain of the first transistor to the gate of the second transistor.

• The patent application describes an integrated circuit structure with two transistors in close proximity, allowing for efficient electrical connections between them.
• The structure includes specific arrangements of gates, channels, source regions, and drain regions, along with conductive contacts and vias to facilitate electrical connections.
• The innovation enables improved performance and functionality of the integrated circuit by optimizing the layout and connections between the transistors.

Potential Applications

The technology described in the patent application could be applied in:

• Advanced semiconductor devices
• High-performance computing systems
• Integrated circuits for telecommunications

Problems Solved

The technology addresses challenges related to:

• Efficient electrical connections between transistors
• Space optimization in integrated circuit design
• Enhancing overall performance and functionality of semiconductor devices

Benefits

The benefits of this technology include:

• Improved efficiency in electrical connections
• Enhanced performance of integrated circuits
• Space-saving design for semiconductor devices

Potential Commercial Applications

The technology has potential commercial applications in:

• Semiconductor manufacturing industry
• Electronics and consumer devices market
• Telecommunications and networking sector

Possible Prior Art

One possible prior art that may be related to this technology is the use of conductive vias in integrated circuit design to connect different components. However, the specific arrangement and configuration described in the patent application may be novel and inventive.

How does this technology impact power consumption in integrated circuits?

The article does not provide information on the potential effects of this technology on power consumption in integrated circuits. Further research and analysis would be needed to determine the impact on power efficiency.

What are the potential limitations or drawbacks of this integrated circuit structure?

The article does not discuss any limitations or drawbacks of the technology described. It would be important to consider factors such as scalability, manufacturing complexity, and cost implications in evaluating the practicality of implementing this structure in real-world applications.

Original Abstract Submitted

An integrated circuit structure in which a gate overlies channel region in an active area of a first transistor. The first transistor includes a channel region, a source region and a drain region. A conductive contact is coupled to the drain region of the first transistor. A second transistor that includes a channel region, a source region a drain region is adjacent to the first transistor. The gate of the second transistor is spaced from the gate of the first transistor. A conductive via passes through an insulation layer to electrically connect to the gate of the second transistor. An expanded conductive via overlays both the conductive contact and the conductive via to electrically connect the drain of the first transistor to the gate of the second transistor.