18516630. PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Chao-Ching Cheng of Hsinchu City (TW)
PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18516630 titled 'PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
Simplified Explanation
The abstract describes a pellicle for an EUV photo mask that includes a main layer with nanotubes sandwiched between two layers of two-dimensional materials.
- The pellicle for an EUV photo mask includes a main layer with nanotubes.
- At least one of the layers contains a two-dimensional material with stacked layers.
- The first layer contains a first two-dimensional material, while the second layer contains a second two-dimensional material.
Potential Applications
The technology could be used in the manufacturing of EUV photo masks for semiconductor lithography.
Problems Solved
1. Protection of EUV photo masks from contaminants and damage. 2. Enhancing the durability and performance of EUV photo masks.
Benefits
1. Improved quality and longevity of EUV photo masks. 2. Enhanced precision in semiconductor lithography processes.
Potential Commercial Applications
Optimizing semiconductor manufacturing processes with advanced EUV photo mask technology.
Possible Prior Art
There may be prior art related to the use of nanotubes in protective layers for photomasks, but specific examples are not provided in this abstract.
Unanswered Questions
How does the integration of nanotubes in the main layer improve the performance of the EUV photo mask?
The abstract mentions the presence of nanotubes in the main layer, but it does not elaborate on how this integration enhances the functionality of the EUV photo mask.
What are the specific characteristics of the two-dimensional materials used in the first and second layers?
While the abstract mentions the use of two-dimensional materials in the first and second layers, it does not provide details on the specific properties or types of these materials.
Original Abstract Submitted
A pellicle for an EUV photo mask includes a first layer; a second layer; and a main layer disposed between the first layer and second layer and including a plurality of nanotubes. At least one of the first layer or the second layer includes a two-dimensional material in which one or more two-dimensional layers are stacked. In one or more of the foregoing and following embodiments, the first layer includes a first two-dimensional material and the second layer includes a second two-dimensional material.
