18515961. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Ren Hsieh of Changhua City (TW)
Ching-Wen Chan of Taichung City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515961 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device with a non-volatile memory in a memory cell area and a ring structure area surrounding it.
- Protrusion of substrate formed in ring structure area, protruding from isolation insulating layer.
- High-k dielectric film formed to cover protrusion and isolation insulating layer.
- Poly silicon film formed over high-k dielectric film, then both patterned.
- Insulating layers formed over patterned films to seal high-k dielectric film.
Potential Applications
This technology can be applied in the manufacturing of various semiconductor devices, especially those requiring non-volatile memory in a compact and efficient design.
Problems Solved
1. Efficient utilization of space in semiconductor devices. 2. Improved insulation and protection of memory cell area. 3. Enhanced performance and reliability of non-volatile memory.
Benefits
1. Higher integration density of memory cells. 2. Improved durability and longevity of semiconductor devices. 3. Enhanced overall performance and efficiency of the device.
Original Abstract Submitted
In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.
