18515813. VAPOR DEPOSITION MASK AND METHOD FOR PRODUCING ORGANIC ELECTRONIC DEVICE simplified abstract (CANON KABUSHIKI KAISHA)
VAPOR DEPOSITION MASK AND METHOD FOR PRODUCING ORGANIC ELECTRONIC DEVICE
Organization Name
Inventor(s)
TAKAHIRO Yajima of Kanagawa (JP)
SHINICHIRO Watanabe of Kanagawa (JP)
VAPOR DEPOSITION MASK AND METHOD FOR PRODUCING ORGANIC ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18515813 titled 'VAPOR DEPOSITION MASK AND METHOD FOR PRODUCING ORGANIC ELECTRONIC DEVICE
Simplified Explanation
The patent application describes a vapor deposition mask made of a semiconductor substrate with openings of varying widths to allow vapor deposition particles to pass through. The mask has an aperture portion with the smallest opening width located between the edge of the opening on the vapor deposition source side and the edge of the opening on the substrate side. The inner walls of the openings have an uneven shape.
- The vapor deposition mask is made of a semiconductor substrate.
- The mask has openings of varying widths to allow vapor deposition particles to pass through.
- An aperture portion with the smallest opening width is located between the edge of the opening on the vapor deposition source side and the edge of the opening on the substrate side.
- The inner walls of the openings have an uneven shape.
Potential Applications
- Semiconductor manufacturing - Thin film deposition processes - Microelectronics production
Problems Solved
- Precise control of vapor deposition particle flow - Uniform deposition on substrates - Minimization of particle blockages during deposition
Benefits
- Improved deposition accuracy - Enhanced substrate coverage - Reduced defects in thin film layers
Original Abstract Submitted
A vapor deposition mask made of a semiconductor substrate, comprising a plurality of openings to pass vapor deposition particles, wherein an aperture portion of which opening width is smallest is disposed between an edge of the opening on a vapor deposition source side and an edge of the opening on a substrate side, the opening width on the substrate side is larger than that of the aperture portion, and at least a part of an inner wall of each of the plurality of openings has a uneven shape.
