18512648. ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
Jeonggyu Song of Seongnam-si (KR)
ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512648 titled 'ELECTRICAL DEVICE AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a dielectric layer with specific metal oxide areas containing boron and other metal elements.
- Lower electrode
- Upper electrode isolated from direct contact with lower electrode
- Dielectric layer with first, second, and third metal oxide areas
- Third metal oxide area contains boron and metal elements like aluminum, magnesium, silicon, or beryllium
- Boron content in the third metal oxide area is less than or equal to the content of the other metal elements
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Energy storage devices
Problems Solved
- Improved performance of semiconductor devices
- Enhanced dielectric properties
- Better insulation between electrodes
Benefits
- Higher efficiency
- Increased reliability
- Advanced technology in semiconductor devices
Original Abstract Submitted
Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.
