18512515. METHOD OF FABRICATING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
METHOD OF FABRICATING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM)
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chang-Lin Yang of Hsinchu (TW)
Sheng-Yuan Chang of Hsinchu (TW)
Chien-Hua Huang of Hsinchu (TW)
METHOD OF FABRICATING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) - A simplified explanation of the abstract
This abstract first appeared for US patent application 18512515 titled 'METHOD OF FABRICATING MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM)
Simplified Explanation
The patent application describes a method for fabricating magnetoresistive random-access memory (MRAM) cells on a substrate, involving the removal of metal components deposited on the cells during the etching process.
- Magnetic tunneling junction (MTJ) layer is formed on the substrate.
- Metal components deposited on the surface of the MRAM cells and between them are removed by chemical reaction.
- Extra substances formed during the removal of metal components are eliminated through a further etching process by physical etching.
Potential Applications
- Memory storage devices
- Computing systems
- Data processing applications
Problems Solved
- Eliminates metal components that may interfere with the functionality of MRAM cells
- Prevents the formation of extra substances on the substrate
Benefits
- Improved performance and reliability of MRAM cells
- Enhanced data storage capabilities
- Simplified fabrication process for MRAM technology
Original Abstract Submitted
A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.
