18511711. EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hsueh-Chang Sung of Zhubei City (TW)
Kun-Mu Li of Zhudong Township (TW)
EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18511711 titled 'EPITAXIAL FIN STRUCTURES OF FINFET HAVING AN EPITAXIAL BUFFER REGION AND AN EPITAXIAL CAPPING REGION
Simplified Explanation
The patent application discloses a fin structure on a substrate with various epitaxial regions and dielectric regions.
- The fin structure consists of a first epitaxial region, a second epitaxial region, and a dielectric region separating them.
- A merged epitaxial region is present on both the first and second epitaxial regions.
- An epitaxial buffer region is located on the top surface of the merged epitaxial region.
- An epitaxial capping region covers the buffer epitaxial region and the side surfaces of the merged epitaxial region.
Potential Applications
- Semiconductor devices
- Integrated circuits
- Nanotechnology
Problems Solved
- Enhanced performance of semiconductor devices
- Improved integration of components
- Increased efficiency of integrated circuits
Benefits
- Higher functionality
- Better performance
- Increased reliability
Original Abstract Submitted
A fin structure on a substrate is disclosed. The fin structure can comprises a first epitaxial region and a second epitaxial region separated by a dielectric region, a merged epitaxial region on the first epitaxial region and the second epitaxial region, an epitaxial buffer region on a top surface of the merged epitaxial region, and an epitaxial capping region on the buffer epitaxial region and side surfaces of the merged epitaxial region.
