18499258. DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
Organization Name
Inventor(s)
BYOUNGHAK Hong of Albany NY (US)
SEUNGHYUN Song of Albany NY (US)
KI-IL Kim of Clifton Park NY (US)
GUNHO Jo of Clifton Park NY (US)
KANG-ILL Seo of Springfield VA (US)
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18499258 titled 'DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
Simplified Explanation
The abstract describes a nanosheet transistor device with a transistor stack consisting of lower and upper nanosheet transistors with different widths and gate widths.
- Lower nanosheet transistor with a first nanosheet width and lower gate width
- Upper nanosheet transistor on top of lower nanosheet transistor with a second nanosheet width and upper gate width different from the lower nanosheet transistor
- Potential Applications:**
- Advanced electronic devices
- High-performance computing
- Nanotechnology research
- Problems Solved:**
- Improving transistor performance
- Enhancing device efficiency
- Miniaturizing electronic components
- Benefits:**
- Increased speed and efficiency
- Enhanced functionality
- Potential for smaller and more powerful electronic devices
Original Abstract Submitted
Nanosheet transistor devices are provided. A nanosheet transistor device includes a transistor stack that includes a lower nanosheet transistor having a first nanosheet width and a lower gate width. The transistor stack also includes an upper nanosheet transistor that is on the lower nanosheet transistor and that has a second nanosheet width and an upper gate width that are different from the first nanosheet width and the lower gate width, respectively. Related methods of forming a nanosheet transistor device are also provided.
