18487177. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Su Min Cho of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18487177 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor device that includes a substrate with two regions, a first silicon-germanium film formed inside the surface of the first region to define a first gate trench, a first gate insulating film on the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region on both sides of the first metallic gate electrode, a second gate insulating film in the second region, and a second metallic gate electrode on the second gate insulating film.
- The device includes a substrate with two regions.
- A first silicon-germanium film is formed inside the surface of the first region to define a first gate trench.
- A first gate insulating film extends on the first silicon-germanium film along the profile of the first gate trench and is in physical contact with the first silicon-germanium film.
- A first metallic gate electrode is present on the first gate insulating film.
- A source/drain region is formed inside the substrate on both sides of the first metallic gate electrode.
- A second gate insulating film is present in the second region.
- A second metallic gate electrode is present on the second gate insulating film.
Potential applications of this technology:
- Semiconductor devices with improved performance and functionality.
- Enhanced integration of components on a substrate.
- More efficient and reliable electronic devices.
Problems solved by this technology:
- Improved gate control in semiconductor devices.
- Reduction in leakage current.
- Enhanced device performance and reliability.
Benefits of this technology:
- Higher speed and efficiency in electronic devices.
- Improved integration and miniaturization of components.
- Enhanced reliability and functionality of semiconductor devices.
Original Abstract Submitted
A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.
