18483907. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Yukio Hayakawa of SUWON-SI (KR)
Yong Seok Kim of SUWON-SI (KR)
Bong Yong Lee of SUWON-SI (KR)
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18483907 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with ferroelectric layers, channel layers, gate insulating layers, and back gate electrodes stacked on the cell substrate. The device also features gate electrodes, channel structures, and a bit line, all arranged in a specific configuration to enhance memory performance.
- The semiconductor memory device includes a cell substrate, gate electrodes, channel structures, and a bit line.
- The gate electrodes are stacked on the cell substrate and extend in a first direction.
- The channel structures extend in a second direction different from the first direction and penetrate the gate electrodes.
- Each channel structure consists of a ferroelectric layer, a channel layer, a gate insulating layer, and a back gate electrode.
- The first and second channel structures are adjacent to each other in the first direction and share a bit line.
Potential Applications
The technology described in this patent application could be applied in various memory devices, such as non-volatile memory, embedded memory, and high-speed memory applications.
Problems Solved
This technology addresses the need for improved memory performance, reliability, and scalability in semiconductor memory devices.
Benefits
The benefits of this technology include enhanced memory performance, increased reliability, and improved scalability for semiconductor memory devices.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor industry, particularly in the development of advanced memory devices for various electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of ferroelectric materials in memory devices to enhance performance and reliability. Additionally, the integration of multiple channel structures in a memory device to improve memory functionality could also be considered prior art.
Unanswered Questions
How does this technology compare to existing memory device structures in terms of performance and scalability?
The article does not provide a direct comparison between this technology and existing memory device structures in terms of performance and scalability.
What are the specific manufacturing processes involved in producing this semiconductor memory device?
The article does not detail the specific manufacturing processes involved in producing this semiconductor memory device.
Original Abstract Submitted
A semiconductor memory device includes a cell substrate, a plurality of gate electrodes sequentially stacked on the cell substrate and extending in a first direction, first and second channel structures extending in a second direction different from the first direction and penetrating the plurality of gate electrodes, and a bit line disposed on the plurality of gate electrodes. The first and second channel structures each include a ferroelectric layer, a channel layer, a gate insulating layer and a back gate electrode, which are sequentially disposed on side walls of the plurality of gate electrodes. The first channel structure and the second channel structure are adjacent to each other in the first direction and share a bit line.
