18483413. SEMICONDUCTOR DEVICES INCLUDING GATE SPACER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES INCLUDING GATE SPACER

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Bongseok Suh of Seoul (KR)

Daewon Kim of Hwaseong-si (KR)

Beomjin Park of Hwaseong-si (KR)

Sukhyung Park of Seoul (KR)

Sungil Park of Suwon-si (KR)

Jaehoon Shin of Suwon-si (KR)

Bongseob Yang of Suwon-si (KR)

Junggun You of Ansan-si (KR)

Jaeyun Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICES INCLUDING GATE SPACER - A simplified explanation of the abstract

This abstract first appeared for US patent application 18483413 titled 'SEMICONDUCTOR DEVICES INCLUDING GATE SPACER

Simplified Explanation

The abstract describes a semiconductor device with specific components and features. It includes a first active region on a substrate, a first gate electrode across the first active region, a first drain region adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on the side surface of the first gate electrode extending into the undercut region.

• The first active region is defined on a substrate.
• The first gate electrode is positioned across the first active region.
• The first drain region is located next to the first gate electrode.
• An undercut region exists between the first active region and the first gate electrode.
• A first gate spacer is present on the side surface of the first gate electrode, extending into the undercut region.

Potential applications of this technology:

• Semiconductor devices and integrated circuits
• Electronics manufacturing and fabrication
• Power electronics
• Communication systems
• Consumer electronics

Problems solved by this technology:

• Improved performance and efficiency of semiconductor devices
• Enhanced control and functionality of integrated circuits
• Reduction of power consumption and heat generation
• Increased reliability and durability of electronic components

Benefits of this technology:

• Higher speed and performance of semiconductor devices
• More precise control and operation of integrated circuits
• Lower power consumption and improved energy efficiency
• Enhanced reliability and lifespan of electronic devices

Original Abstract Submitted

A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.