18483058. TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Minsu Seol of Seoul (KR)

Hyeonjin Shin of Suwon-si (KR)

Minseok Yoo of Suwon-si (KR)

Minhyun Lee of Suwon-si (KR)

TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18483058 titled 'TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES

Simplified Explanation

The patent application describes a two-dimensional material (2D) based wiring conductive layer contact structure for electronic devices. It also includes methods of manufacturing these electronic devices. The main innovation is a 2D material-based field effect transistor that consists of multiple layers on a substrate, including insulating and metallic 2D material layers.

• The field effect transistor includes a substrate, first to third 2D material layers, an insulating layer, a source electrode, a drain electrode, and a gate electrode.
• The first 2D material layer exhibits semiconductor characteristics, while the second and third 2D material layers are metallic.
• The first 2D material layer may have a first channel layer and a second channel layer.
• The first 2D material layer partially overlaps the second and third 2D material layers.

Potential Applications:

• This technology can be used in the manufacturing of electronic devices, such as transistors, that require efficient and reliable wiring conductive layers.
• It can be applied in various fields, including semiconductor industry, electronics manufacturing, and integrated circuit design.

Problems Solved:

• The innovation solves the problem of achieving efficient and reliable wiring conductive layers in electronic devices.
• It addresses the need for improved performance and functionality of field effect transistors.

Benefits:

• The use of 2D material-based wiring conductive layers improves the overall performance and efficiency of electronic devices.
• The technology enables the integration of different materials with complementary properties, enhancing the functionality of the transistors.
• It offers a more compact and scalable solution for electronic devices, allowing for miniaturization and increased integration density.

Original Abstract Submitted

Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.