View source for 18479934. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Japan Display Inc.)

=SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE=


==Organization Name==

[[:Category:Japan Display Inc.|Japan Display Inc.]]


[[Category:Japan Display Inc.]]

==Inventor(s)==

[[:Category:Hajime Watakabe of Minato-ku (JP)|Hajime Watakabe of Minato-ku (JP)]][[Category:Hajime Watakabe of Minato-ku (JP)]]

[[:Category:Masashi Tsubuku of Minato-ku (JP)|Masashi Tsubuku of Minato-ku (JP)]][[Category:Masashi Tsubuku of Minato-ku (JP)]]

[[:Category:Toshinari Sasaki of Minato-ku (JP)|Toshinari Sasaki of Minato-ku (JP)]][[Category:Toshinari Sasaki of Minato-ku (JP)]]

[[:Category:Akihiro Hanada of Minato-ku (JP)|Akihiro Hanada of Minato-ku (JP)]][[Category:Akihiro Hanada of Minato-ku (JP)]]

[[:Category:Takaya Tamaru of Minato-ku (JP)|Takaya Tamaru of Minato-ku (JP)]][[Category:Takaya Tamaru of Minato-ku (JP)]]

==SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18479934 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

==Simplified Explanation==

The semiconductor device described in the abstract includes an oxide insulating layer, an oxide semiconductor layer, a gate electrode, a gate insulating layer, and a first insulating layer. The device is divided into three regions with varying impurity levels in the oxide semiconductor and insulating layers.

* The gate insulating layer in the first region is 200 nm or more in thickness.
* The gate electrode contacts the first insulating layer in the first region.
* The oxide semiconductor layer contacts the first insulating layer in the second region.
* The amount of impurities in the oxide semiconductor layer in the second region is higher than in the first region.
* The amount of impurities in the oxide insulating layer in the third region is higher than in the second region.

== Potential Applications ==
This technology could be applied in the development of advanced semiconductor devices for various electronic applications.

== Problems Solved ==
This innovation addresses the need for improved performance and efficiency in semiconductor devices by optimizing impurity levels in different regions.

== Benefits ==
The semiconductor device offers enhanced functionality and reliability due to the controlled impurity levels in the oxide semiconductor and insulating layers.

== Potential Commercial Applications ==
The technology has potential applications in the manufacturing of high-performance electronic devices for consumer electronics, communication systems, and industrial equipment.

== Possible Prior Art ==
Prior art in the field of semiconductor devices may include research on impurity control in oxide layers and optimizing device performance through material engineering.

=== Unanswered Questions ===

=== How does this technology compare to existing semiconductor devices in terms of performance and efficiency? ===
This article provides detailed information about the structure and impurity levels in the semiconductor device but does not directly compare its performance to existing technologies.

=== What are the specific electronic applications that could benefit the most from this semiconductor device? ===
While the potential applications are mentioned, a more detailed analysis of the specific industries or devices that could benefit the most from this technology is not provided in the article.


==Original Abstract Submitted==

A semiconductor device according to an embodiment includes: an oxide insulating layer; an oxide semiconductor layer; a gate electrode; a gate insulating layer; and a first insulating layer, wherein the semiconductor device is divided into a first to a third regions, a thickness of the gate insulating layer in the first region is 200 nm or more, the gate electrode contacts the first insulating layer in the first region, the oxide semiconductor layer contacts the first insulating layer in the second region, an amount of impurities contained in the oxide semiconductor layer in the second region is greater than an amount of impurities contained in the oxide semiconductor layer in the first region, and an amount of impurities contained in the oxide insulating layer in the third region is greater than an amount of impurities contained in the oxide insulating layer in the second region.



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