18477773. MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kyeongtae Nam of Suwon-si (KR)

Younghun Seo of Suwon-si (KR)

MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18477773 titled 'MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION

Simplified Explanation

The memory device described in the abstract includes a memory cell array with multiple memory blocks, a sense amplifier that performs an offset compensating operation in response to a compensation signal, and an offset time adjustment circuit that adjusts the execution time of the offset compensating operation based on a comparison result of voltages at specific nodes.

  • Memory device with memory cell array and sense amplifier
  • Sense amplifier performs offset compensating operation
  • Offset time adjustment circuit adjusts execution time based on voltage comparison

Potential Applications

The technology described in this patent application could be applied in:

  • Solid-state drives
  • Embedded systems
  • Mobile devices

Problems Solved

This innovation addresses the following issues:

  • Offset errors in memory operations
  • Inaccurate data retrieval
  • Performance degradation due to offset variations

Benefits

The benefits of this technology include:

  • Improved data accuracy
  • Enhanced memory performance
  • Reduced offset errors

Potential Commercial Applications

The technology could be utilized in various commercial applications such as:

  • Consumer electronics
  • Automotive systems
  • Industrial automation

Possible Prior Art

One possible prior art related to this technology is the use of sense amplifiers in memory devices to improve data retrieval accuracy.

Unanswered Questions

How does the offset compensation signal affect the performance of the memory device?

The abstract mentions the offset compensation signal, but it does not provide details on how it impacts the overall performance of the memory device.

What is the specific mechanism behind the voltage comparison at the equalization voltage node?

While the abstract mentions a comparison of voltages at specific nodes, it does not delve into the specific mechanism behind this comparison process.


Original Abstract Submitted

Disclosed is a memory device that includes a memory cell array having a plurality of memory blocks, a sense amplifier connected to the plurality of memory blocks and configured to perform an offset compensating operation in response to an offset compensation signal, and an offset time adjustment circuit connected to the sense amplifier and configured to adjust an execution time of the offset compensating operation based on a comparison result of a voltage at an equalization voltage node and a reference offset voltage.