18475796. IMAGE SENSORS AND ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 IMAGE SENSORS AND ELECTRONIC DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGE SENSORS AND ELECTRONIC DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
IMAGE SENSORS AND ELECTRONIC DEVICES
Organization Name
Inventor(s)
Kyung Bae Park of Suwon-si (KR)
Sungyoung Yun of Suwon-si (KR)
IMAGE SENSORS AND ELECTRONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18475796 titled 'IMAGE SENSORS AND ELECTRONIC DEVICES
Simplified Explanation
The patent application describes an image sensor with a semiconductor substrate, organic active layer, interlayer, and optional color filter layer. The organic active layer contains a singlet fission material, while the interlayer includes a dielectric material selected from various compounds.
- The image sensor integrates photo-sensing elements on a semiconductor substrate.
- The organic active layer contains a singlet fission material.
- The interlayer between the organic active layer and the semiconductor substrate includes a dielectric material.
- The color filter layer may be present on top of the organic active layer.
Potential Applications
The technology described in the patent application could be used in digital cameras, smartphones, security cameras, and other imaging devices.
Problems Solved
This technology may improve the efficiency and performance of image sensors by incorporating singlet fission materials and specific dielectric materials in the organic active layer and interlayer, respectively.
Benefits
The benefits of this technology may include enhanced image quality, lower power consumption, improved sensitivity to light, and potentially reduced manufacturing costs.
Potential Commercial Applications
- "Innovative Image Sensor Technology for Enhanced Imaging Performance"
Possible Prior Art
There may be prior art related to image sensors with singlet fission materials or specific dielectric materials in the organic active layer and interlayer. Research in the field of organic electronics and semiconductor devices may reveal relevant prior art.
What is the manufacturing process for this image sensor technology?
The manufacturing process for this image sensor technology involves integrating photo-sensing elements on a semiconductor substrate, depositing the organic active layer containing a singlet fission material, adding the interlayer with a dielectric material, and optionally applying a color filter layer. The specific steps and techniques used in each stage of manufacturing would need to be detailed further.
How does the use of singlet fission materials impact the performance of the image sensor?
Singlet fission materials in the organic active layer of the image sensor may enhance the efficiency of light absorption and conversion, potentially leading to improved sensitivity and image quality. The exact mechanisms and effects of singlet fission in this context would require further study and analysis.
Original Abstract Submitted
An image sensor includes a semiconductor substrate in which a plurality of photo-sensing elements are integrated, an organic active layer on the semiconductor substrate, an interlayer between the organic active layer and the semiconductor substrate, and optionally a color filter layer on the organic active layer. The organic active layer includes a singlet fission material. The interlayer includes a dielectric selected from an oxide, a nitride, oxynitride, fluoride, oxyfluoride, and any combination thereof.
