18474849. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18474849 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
In a semiconductor device fabrication method, a desired mask pattern can be achieved without the need for an exposure process on different regions of a substrate. This is done by creating multiple line patterns with varying intervals on these regions and then applying a double patterning process to them. This approach enhances product reliability and the economic feasibility of manufacturing semiconductor devices.
- Explanation of the patent/innovation:
* Forming multiple line patterns with different intervals on various regions of a substrate * Applying a double patterning process to these line patterns * Achieving a desired mask pattern without additional exposure processes
Potential Applications
The technology can be applied in the manufacturing of various semiconductor devices, such as integrated circuits, memory chips, and processors.
Problems Solved
1. Eliminates the need for multiple exposure processes on different regions of a substrate 2. Enhances product reliability and manufacturing economic feasibility
Benefits
1. Simplifies the fabrication process of semiconductor devices 2. Reduces production costs 3. Improves the overall quality and performance of the devices
Potential Commercial Applications
Optimizing Mask Patterning Process for Semiconductor Device Fabrication
Possible Prior Art
There may be prior art related to double patterning processes in semiconductor device fabrication, but specific examples are not provided here.
Unanswered Questions
How does this method compare to traditional exposure processes in terms of efficiency and cost-effectiveness?
The article does not provide a direct comparison between this method and traditional exposure processes in semiconductor device fabrication.
Are there any limitations or challenges associated with implementing this double patterning process on different regions of a substrate?
The potential limitations or challenges of applying this double patterning process to various regions of a substrate are not discussed in the article.
Original Abstract Submitted
A method of fabricating a semiconductor device may implement a desired mask pattern even without additionally performing an exposure process on any one of different regions of a substrate by forming a plurality of line patterns disposed at different intervals on the different regions, respectively, and applying a double patterning process to the plurality of line patterns. Such a method may increase product reliability and manufacturing economic feasibility of a semiconductor device.
