18472312. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
YUICHI Mori of Nisshin-shi (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18472312 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor substrate with multiple semiconductor regions arranged in a specific order. Trench gates are extended from the main surface of the substrate to reach certain semiconductor regions, with specific spacing and orientation.
- The semiconductor device includes a semiconductor substrate with multiple semiconductor regions arranged in a specific order.
- Trench gates are extended from the main surface of the substrate to reach certain semiconductor regions, with specific spacing and orientation.
Potential Applications
This technology could be applied in:
- Power electronics
- Semiconductor devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving semiconductor device performance
- Enhancing power efficiency
- Increasing device reliability
Benefits
The benefits of this technology include:
- Higher efficiency in power electronics
- Improved performance of semiconductor devices
- Enhanced reliability of integrated circuits
Potential Commercial Applications
This technology could be commercially applied in:
- Power management systems
- Electric vehicles
- Renewable energy systems
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with trench gates for improved performance and efficiency
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This question can be answered by conducting comparative studies and performance tests between this technology and existing semiconductor devices.
What are the potential challenges in scaling up the production of semiconductor devices using this technology?
This question can be addressed by analyzing the manufacturing processes and potential bottlenecks in large-scale production.
Original Abstract Submitted
A semiconductor device includes: a semiconductor substrate having a first main surface and a second main surface, in which a first semiconductor region, a second semiconductor region, and a third semiconductor region are arranged in this order in a thickness direction of the semiconductor substrate. The third semiconductor region is exposed from the first main surface. Trench gates are extended from the first main surface to reach the first semiconductor region beyond the third semiconductor region and the second semiconductor region. The trench gates are spaced from each other in a first direction. A part of the semiconductor substrate located between the trench gates adjacent to each other in the first direction includes a trunk portion extending along a second direction orthogonal to the first direction and a branch portion protruding from the trunk portion.
