View source for 18471746. SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

=SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME=


==Organization Name==

[[:Category:SAMSUNG ELECTRONICS CO., LTD.|SAMSUNG ELECTRONICS CO., LTD.]]


[[Category:SAMSUNG ELECTRONICS CO., LTD.]]

==Inventor(s)==

[[:Category:Chul Min Choi of Suwon-si (KR)|Chul Min Choi of Suwon-si (KR)]][[Category:Chul Min Choi of Suwon-si (KR)]]

[[:Category:Chang Hoon Byeon of Suwon-si (KR)|Chang Hoon Byeon of Suwon-si (KR)]][[Category:Chang Hoon Byeon of Suwon-si (KR)]]

[[:Category:Sun Il Shim of Suwon-si (KR)|Sun Il Shim of Suwon-si (KR)]][[Category:Sun Il Shim of Suwon-si (KR)]]

==SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18471746 titled 'SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME

==Simplified Explanation==

The patent application describes a semiconductor memory device with various structures including gate electrodes, channel structures, string select lines, anti-arcing contacts, and insulating patterns.

* The semiconductor memory device includes a cell substrate, a mold structure with stacked gate electrodes, a channel structure, a string select line, a string select channel structure, an anti-arcing contact, an insulating pattern, and an anti-arcing insulating pattern.

* The channel structure penetrates the mold structure, while the string select channel structure penetrates the string select line and contacts the channel structure. The anti-arcing contact also penetrates the mold structure, with an insulating pattern between it and the gate electrodes. The anti-arcing insulating pattern penetrates the string select line to be in contact with the anti-arcing contact.

== Potential Applications ==
The technology described in the patent application could be applied in the development of advanced semiconductor memory devices for various electronic devices such as smartphones, tablets, laptops, and servers.

== Problems Solved ==
This technology helps in improving the performance and reliability of semiconductor memory devices by reducing arcing and enhancing the overall efficiency of data storage and retrieval processes.

== Benefits ==
The benefits of this technology include increased data storage capacity, faster data access speeds, improved energy efficiency, and enhanced durability of semiconductor memory devices.

== Potential Commercial Applications ==
The technology could find commercial applications in the semiconductor industry for manufacturing next-generation memory devices with higher performance and reliability, catering to the growing demand for advanced memory solutions in various electronic products.

== Possible Prior Art ==
One possible prior art for this technology could be the development of similar semiconductor memory devices with anti-arcing structures and insulating patterns to improve device performance and reliability.

== Unanswered Questions ==

=== How does the anti-arcing contact improve the efficiency of the semiconductor memory device? ===

The anti-arcing contact helps in reducing arcing effects within the device, which can lead to improved data storage and retrieval processes. By preventing arcing, the device can operate more efficiently and reliably.

=== What are the specific materials used in the insulating patterns of the semiconductor memory device? ===

The patent application does not provide detailed information on the specific materials used in the insulating patterns. Further research or analysis may be required to determine the exact composition of these materials and their impact on the device's performance.


==Original Abstract Submitted==

A semiconductor memory device may include a cell substrate; a mold structure including a plurality of gate electrodes stacked on the cell substrate; a channel structure penetrating the mold structure; a string select line on the mold structure; a string select channel structure penetrating the string select line and contacting the channel structure; an anti-arcing contact penetrating the mold structure; an insulating pattern between the anti-arcing contact and the plurality of gate electrodes; and an anti-arcing insulating pattern penetrating the string select line to be in contact with the anti-arcing contact.



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