18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
- 1 SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
Hideyuki Uehigashi of Nisshin-shi (JP)
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18471463 titled 'SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The patent application describes a silicon carbide wafer with a substrate and an epitaxial layer, both made of silicon carbide, where the concentration of carbon vacancies decreases continuously from the substrate towards the epitaxial layer.
- The silicon carbide wafer includes a substrate and an epitaxial layer, both made of silicon carbide.
- The concentration of carbon vacancies in the substrate and epitaxial layer decreases continuously from the substrate towards the epitaxial layer.
- The concentration of carbon vacancies in the substrate is 3.0×10^15 cm^-3 or more.
Potential Applications
The technology could be used in:
- Power electronics
- High-temperature applications
- Semiconductor devices
Problems Solved
This technology helps to:
- Improve the performance and reliability of silicon carbide wafers
- Enhance the efficiency of power electronics
- Enable high-temperature operation of devices
Benefits
The benefits of this technology include:
- Increased efficiency in power electronics
- Enhanced durability and reliability of semiconductor devices
- Improved performance in high-temperature environments
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Power semiconductor industry
- Aerospace and defense sector
- Automotive industry
Possible Prior Art
One possible prior art could be the use of silicon carbide wafers with varying concentrations of carbon vacancies to improve device performance and reliability.
Unanswered Questions
How does this technology compare to traditional silicon wafers in terms of performance and efficiency?
This article does not provide a direct comparison between silicon carbide wafers with decreasing carbon vacancy concentrations and traditional silicon wafers. Further research or testing may be needed to determine the specific advantages of this technology over traditional silicon wafers.
What is the potential impact of this technology on reducing energy consumption in power electronics?
While the benefits of this technology are mentioned, the specific impact on reducing energy consumption in power electronics is not addressed in this article. Additional studies or simulations may be required to quantify the energy-saving potential of this innovation.
Original Abstract Submitted
A silicon carbide wafer includes a substrate made of silicon carbide and an epitaxial layer made of silicon carbide and disposed on the substrate. A concentration of carbon vacancies in the substrate and the epitaxial layer continuously decreases from the substrate toward the epitaxial layer. The concentration of the carbon vacancies in the substrate is 3.0×10cmor more.
