18468394. THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Seunggeol Nam of Suwon-si (KR)
THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18468394 titled 'THIN FILM STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Simplified Explanation
The abstract of the patent application describes a thin film structure that includes layers of ferroelectrics and anti-ferroelectrics, as well as a semiconductor device that incorporates this structure. The thin film structure consists of a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer sandwiched between them.
- The first anti-ferroelectric layer contains anti-ferroelectrics.
- The second anti-ferroelectric layer is separate from the first layer and also contains anti-ferroelectrics.
- The ferroelectric layer is positioned between the first and second anti-ferroelectric layers and contains ferroelectrics.
Potential applications of this technology:
- Memory devices: The thin film structure can be used in memory devices to store and retrieve data.
- Sensors: The structure can be utilized in sensors to detect and measure various physical quantities.
- Actuators: The thin film structure can be employed in actuators to convert electrical energy into mechanical motion.
Problems solved by this technology:
- Enhanced performance: The combination of ferroelectrics and anti-ferroelectrics in the thin film structure can improve the performance of semiconductor devices, such as memory devices and sensors.
- Stability: The inclusion of anti-ferroelectric layers helps to stabilize the ferroelectric layer, ensuring reliable operation of the semiconductor device.
Benefits of this technology:
- Increased efficiency: The thin film structure allows for more efficient data storage and retrieval in memory devices.
- Improved sensitivity: The incorporation of ferroelectrics and anti-ferroelectrics enhances the sensitivity of sensors, enabling more accurate measurements.
- Enhanced reliability: The stability provided by the anti-ferroelectric layers ensures the reliable operation of semiconductor devices over an extended period.
Potential Applications
- Memory devices
- Sensors
- Actuators
Problems Solved
- Enhanced performance of semiconductor devices
- Stability of the ferroelectric layer
Benefits
- Increased efficiency in data storage and retrieval
- Improved sensitivity in measurements
- Enhanced reliability of semiconductor devices
Original Abstract Submitted
A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.
