View source for 18468030. SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)

=SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL=


==Organization Name==

[[:Category:DENSO CORPORATION|DENSO CORPORATION]]


[[Category:DENSO CORPORATION]]

==Inventor(s)==

[[:Category:Kiyoshi Betsuyaku of Tokyo (JP)|Kiyoshi Betsuyaku of Tokyo (JP)]][[Category:Kiyoshi Betsuyaku of Tokyo (JP)]]

[[:Category:Norihiro Hoshino of Tokyo (JP)|Norihiro Hoshino of Tokyo (JP)]][[Category:Norihiro Hoshino of Tokyo (JP)]]

[[:Category:Isaho Kamata of Tokyo (JP)|Isaho Kamata of Tokyo (JP)]][[Category:Isaho Kamata of Tokyo (JP)]]

[[:Category:Hidekazu Tsuchida of Tokyo (JP)|Hidekazu Tsuchida of Tokyo (JP)]][[Category:Hidekazu Tsuchida of Tokyo (JP)]]

[[:Category:Takeshi Okamoto of Nisshin-shi (JP)|Takeshi Okamoto of Nisshin-shi (JP)]][[Category:Takeshi Okamoto of Nisshin-shi (JP)]]

[[:Category:Takahiro Kanda of Nisshin-shi (JP)|Takahiro Kanda of Nisshin-shi (JP)]][[Category:Takahiro Kanda of Nisshin-shi (JP)]]

==SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18468030 titled 'SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

==Simplified Explanation==

The method described in the patent application involves growing a silicon carbide single crystal on a seed substrate surface using a gas method. The key innovation lies in controlling the temperature gradient in the radial direction of the seed substrate during growth to suppress the conversion of threading edge dislocations into prismatic plane dislocations and further into basal plane dislocations. This is achieved by ensuring that the areas where shear stresses exceed critical values do not overlap significantly on the crystal growth surface.

* Silicon carbide single crystal growth method:
  - Utilizes gas method on seed substrate surface
  - Controls temperature gradient to prevent dislocation conversion

* Suppression of dislocation conversion:
  - Prevents threading edge dislocations from converting into prismatic plane dislocations
  - Avoids conversion of prismatic plane dislocations into basal plane dislocations

* Key factors in growth process:
  - Temperature gradient control in radial direction of seed substrate
  - Shear stress management on crystal growth surface

== Potential Applications ==
The technology can be applied in the manufacturing of high-quality silicon carbide single crystal ingots and wafers for use in various industries such as semiconductors, power electronics, and optoelectronics.

== Problems Solved ==
1. Reduction of defects in silicon carbide single crystals
2. Improvement in crystal quality and performance of electronic devices

== Benefits ==
1. Enhanced efficiency and reliability of electronic devices
2. Increased yield and cost-effectiveness in production processes

== Potential Commercial Applications ==
Optimized for SEO: "Silicon Carbide Single Crystal Technology for Semiconductor Industry"
The technology can be commercialized for the production of high-performance semiconductor devices, power modules, and optical components.

== Possible Prior Art ==
There may be prior art related to the growth of silicon carbide single crystals and the control of dislocation formation, but specific examples are not provided in the patent application.

=== Unanswered Questions ===

=== How does this technology compare to existing methods for silicon carbide crystal growth? ===

The article does not provide a direct comparison with existing methods for silicon carbide crystal growth. It would be beneficial to understand the specific advantages and limitations of this new method in comparison to traditional techniques.

=== What are the potential scalability challenges of implementing this technology in industrial production processes? ===

The scalability of the described method for manufacturing silicon carbide single crystals is not addressed in the article. It would be important to investigate the feasibility and potential challenges of scaling up this technology for large-scale production in industrial settings.


==Original Abstract Submitted==

Provided are a method for manufacturing a silicon carbide single crystal, which can suppress conversion of threading edge dislocations into prismatic plane dislocations and conversion of the prismatic plane dislocations into basal plane dislocations; and a silicon carbide single crystal ingot and a silicon carbide wafer, in which conversion from threading edge dislocations into prismatic plane dislocations and conversion from the prismatic plane dislocations into basal plane dislocations have been suppressed. A silicon carbide single crystal is grown on the surface of a seed substrate by a gas method so that a temperature gradient in the radial direction of the seed substrate takes a predetermined value or lower during the growth. The area of regions T to T, where regions R to R of a basal plane whose shear stresses exceed critical resolved shear stress, and regions S to S of a prismatic plane whose shear stresses exceed critical resolved shear stress overlap, is less than a half of the area of a crystal growth surface. Furthermore, the area of the regions T to T is smaller than the area of regions V to V where a region R of the basal plane whose shear stress does not exceed the critical resolved shear stress overlaps the regions S to S



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