18467293. SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS simplified abstract (NEXPERIA B.V.)
Contents
- 1 SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the addition of second rings with a different polarity reduce the impact of interface charges on the device's performance?
- 1.9.3 What specific performance improvements can be expected from the implementation of this technology in semiconductor power devices?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS
Organization Name
Inventor(s)
Georgio El Zammar of Hamburg (DE)
[[:Category:Tim B�ttcher of Hamburg (DE)|Tim B�ttcher of Hamburg (DE)]][[Category:Tim B�ttcher of Hamburg (DE)]]
Massimo Cataldo Mazzillo of Nijmegen (NL)
Sönke Habenicht of Nijmegen (NL)
SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18467293 titled 'SEMICONDUCTOR POWER DEVICE WITH IMPROVED RUGGEDNESS
Simplified Explanation
The present disclosure pertains to a semiconductor power device, specifically a Silicon Carbide (SiC) Merged P-I-N Schottky (MPS) diode. The device features an active area and a termination area adjacent to the active area. The termination area consists of first rings with a first polarity, and the addition of second rings with a second polarity opposite to the first polarity helps reduce the impact of interface charges on the device's performance.
- Active area and termination area in the semiconductor power device
- First rings with a first polarity in the termination area
- Second rings with a second polarity opposite to the first polarity
- Reduction of interface charges effect on device performance
Potential Applications
The technology can be applied in:
- Power electronics
- Renewable energy systems
- Electric vehicles
Problems Solved
The innovation addresses:
- Improved performance in semiconductor power devices
- Reduction of interface charges impact
- Enhanced efficiency in power applications
Benefits
The benefits of this technology include:
- Higher performance levels
- Increased reliability
- Enhanced efficiency
Potential Commercial Applications
The technology can be utilized in:
- Power supply units
- Solar inverters
- Electric vehicle charging systems
Possible Prior Art
One possible prior art could be the use of different ring structures in semiconductor power devices to mitigate interface charge effects.
Unanswered Questions
How does the addition of second rings with a different polarity reduce the impact of interface charges on the device's performance?
The addition of second rings with a different polarity creates a balanced charge distribution, minimizing the influence of interface charges on the device's operation.
What specific performance improvements can be expected from the implementation of this technology in semiconductor power devices?
The technology can lead to enhanced efficiency, reduced power losses, and improved reliability in semiconductor power devices.
Original Abstract Submitted
Aspects of the present disclosure relate to a semiconductor power device, in particular to a Silicon Carbide, SiC, Merged P-I-N Schottky (MPS) diode. The device includes an active area and a termination area adjacent the active area. The termination area includes first rings having a first polarity. By including second rings having a second polarity opposite to the first polarity, a reduced effect of interface charges on the performance of the semiconductor power device can be observed.
