18467278. MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)

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MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME

Organization Name

NEXPERIA B.V.

Inventor(s)

Massimo Cataldo Mazzillo of Nijmegen (NL)

MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18467278 titled 'MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The present disclosure is about an MPS diode and its manufacturing method. The diode includes a semiconductor body with an active area consisting of a drift region of a first conductivity type and a plurality of wells of a second conductivity type, forming PN-junctions with the drift region. The diode also has a metal layer assembly on the surface of the semiconductor body, forming Schottky contacts with the drift region and Ohmic contacts with the wells, with increasing spacing between wells in an outward direction from the center of the active area.

  • Semiconductor body with active area
  • Drift region and wells of different conductivity types
  • Metal layer assembly with Schottky and Ohmic contacts
  • Increasing spacing between wells in outward direction

Potential Applications

The technology can be used in power electronics, high-frequency applications, and solar panels.

Problems Solved

Improved efficiency and performance of diodes, better heat dissipation, and reduced leakage current.

Benefits

Enhanced reliability, increased power handling capabilities, and improved overall device performance.

Potential Commercial Applications

The technology can be applied in renewable energy systems, electric vehicles, and telecommunications equipment.

Possible Prior Art

One possible prior art is the use of Schottky diodes in power electronics applications.

Unanswered Questions

How does the increasing spacing between wells affect the overall performance of the MPS diode?

The increasing spacing between wells may help in reducing the electric field crowding effect, leading to improved breakdown voltage and lower leakage current.

What are the specific manufacturing methods used to create the metal layer assembly in the MPS diode?

The specific techniques and processes involved in creating the metal layer assembly, such as deposition methods and material selection, are not detailed in the abstract.


Original Abstract Submitted

Aspects of the present disclosure generally relate to an MPS diode and a manufacturing method therefor. The MPS diode includes a semiconductor body including an active area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second conductivity type different from the first conductivity type, the plurality of wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The MPS diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the plurality of wells. A spacing between adjacently arranged wells increases in an outward direction from a center of the active area.