18467258. MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)

From WikiPatents
Jump to navigation Jump to search

MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME

Organization Name

NEXPERIA B.V.

Inventor(s)

Massimo Cataldo Mazzillo of Nijmegen (NL)

MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18467258 titled 'MPS DIODE HAVING NON-UNIFORMLY SPACED WELLS AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The MPS diode described in the patent application includes a semiconductor body with an active area, a drift region of a first conductivity type, and a plurality of wells of a second conductivity type forming PN-junctions with the drift region. The diode also features a metal layer assembly with Schottky contacts to the drift region and Ohmic contacts to the wells, with increasing spacing between wells in an outward direction from the center of the active area.

  • Semiconductor body with active area, drift region, and wells
  • Metal layer assembly with Schottky and Ohmic contacts
  • Increasing spacing between wells in outward direction

Potential Applications

The technology described in the patent application could be applied in:

  • Power electronics
  • High-frequency applications
  • Solar panels

Problems Solved

This technology helps address issues related to:

  • Efficiency in power conversion
  • Heat dissipation in electronic devices
  • Signal integrity in high-frequency circuits

Benefits

The benefits of this technology include:

  • Improved performance in power electronics
  • Enhanced reliability in high-frequency applications
  • Increased efficiency in energy conversion

Potential Commercial Applications

The technology could have commercial applications in:

  • Semiconductor manufacturing
  • Electronics industry
  • Renewable energy sector

Possible Prior Art

One possible prior art for this technology could be the development of Schottky diodes with different contact configurations in the semiconductor industry.

Unanswered Questions

How does the increasing spacing between wells affect the overall performance of the MPS diode?

The increasing spacing between wells in an outward direction may impact the breakdown voltage and leakage current characteristics of the diode, but further testing and analysis would be needed to fully understand the implications.

What are the specific materials used in the metal layer assembly of the MPS diode?

The patent application does not provide detailed information on the specific materials used in the metal layer assembly, which could be crucial for understanding the thermal and electrical properties of the diode. Further research or experimentation would be necessary to determine the optimal materials for this component.


Original Abstract Submitted

Aspects of the present disclosure generally relate to an MPS diode and a manufacturing method therefor. The MPS diode includes a semiconductor body including an active area, the active area includes a drift region of a first conductivity type, and a plurality of wells of a second conductivity type different from the first conductivity type, the plurality of wells being mutually spaced apart, each well forming a respective PN-junction with the drift region. The MPS diode further includes a metal layer assembly arranged on a surface of the semiconductor body and at least one metal layer, the metal layer assembly forming a plurality of Schottky contacts together with the drift region and a plurality of respective Ohmic contacts with the plurality of wells. A spacing between adjacently arranged wells increases in an outward direction from a center of the active area.

Retrieved from "http://wikipatents.org/index.php?title=18467258._MPS_DIODE_HAVING_NON-UNIFORMLY_SPACED_WELLS_AND_METHOD_FOR_MANUFACTURING_THE_SAME_simplified_abstract_(NEXPERIA_B.V.)&oldid=45011"